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Vishay P-Channel TrenchFET Power MOSFET 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI9407BDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si9407BDY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.12Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.8V |
Key Features
- The MOSFET operates with an enhancement mode channel.
- Maximum gate source voltage is rated at -20 to +20 V.
- Features a low maximum drain source resistance of 0.12 ohms.
- Typical gate charge is 8 nC at specified gate voltage.
- Power dissipation is rated at 5 W, suitable for compact applications.
- Operational temperature range spans from -55°C to 150°C for reliable performance.
- Package dimensions include length 5 mm, width 4 mm, and height 1.55 mm.
- Complies with IEC 61249-2-21 and RoHS 2002/95/EC standards.
Product Description
Vishay SI9407BDY-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for efficient power switching applications. It supports a maximum continuous drain current of 4.7 A and a drain source voltage up to 60 V. The device features an enhancement mode channel and is packaged in a compact 8-pin SOIC surface mount package measuring 5 mm in length, 4 mm in width, and 1.55 mm in height.
The MOSFET guarantees robust operation across a wide temperature range from -55°C to 150°C, making it suitable for various industrial semiconductor, electronic, and power management applications. The device has a low drain source resistance of 0.12 ohms, enabling efficient conduction with minimal power loss.
The maximum gate source voltage tolerance ranges from -20 V to +20 V, and the typical gate charge is 8 nanocoulombs at the specified gate source voltage, ensuring fast switching. It dissipates up to 5 W of power efficiently, appropriate for demanding use cases requiring reliable transistor switching.
It is an ideal choice for electronic components used in power and connectors, discrete semiconductors, and power transistors utilized in industrial, electrical, and electronic manufacturing sectors.
The MOSFET operates with an enhancement mode channel. Maximum gate source voltage is rated at -20 to +20 V. Features a low maximum drain source resistance of 0.12 ohms. Typical gate charge is 8 nC at specified gate voltage.
Power dissipation is rated at 5 W, suitable for compact applications. Operational temperature range spans from -55°C to 150°C for reliable performance. Package dimensions include length 5 mm, width 4 mm, and height 1.55 mm.
Complies with IEC 61249-2-21 and RoHS 2002/95/EC standards. Browse the Electronics & Electricals category on EnvMart for more high-quality semiconductor components and Power MOSFETs from trusted manufacturers like Vishay.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 4.7 A.
It can handle a maximum drain source voltage of up to 60 V.
The typical gate charge is 8 nanocoulombs (nC) at the specified gate voltage.
The power dissipation is rated at 5 W, making it suitable for compact applications.
The package dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
The operational temperature range spans from -55°C to 150°C.
It features an enhancement mode channel, which is a type P channel.
The maximum gate source voltage is rated at -20 V to +20 V.
The maximum drain source resistance is 0.12 ohms.
This model uses a surface mount type package.
It complies with IEC 61249-2-21 and RoHS 2002/95/EC standards.
The forward voltage is rated at -0.8 V.
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