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Vishay TrenchFET Type P-Channel MOSFET 30 V, 50 A, 48 W PowerPAK SO-8 SI7149ADP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SI7149ADP-T1-GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead (Pb)-Free |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.0052Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 43.1nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 0.74V |
Key Features
- Designed for surface mount applications with an 8-pin configuration.
- Features a low drain-source resistance of 0.0052 ohm to minimize conduction losses.
- Maximum power dissipation rating of 48 watts for robust thermal performance.
- Operates in enhancement channel mode with gate-source voltage limits of -25 to +25 V.
- Typical gate charge is 43.1 nC at gate-source voltage of 4 V, ensuring efficient switching.
- Forward voltage drop is 0.74 V, supporting power efficiency.
- Wide operating temperature range from -55 to 150 degrees Celsius for reliability in various environments.
- Compact dimensions of 5.99 mm length, 5 mm width, and 1.07 mm height optimize PCB space.
Product Description
Vishay SI7149ADP-T1-GE3 is a high-performance TrenchFET type P-Channel MOSFET designed for robust power switching applications requiring 50 A continuous drain current at 30 V drain-source voltage. Packaged in an 8-pin PowerPAK SO-8 surface mount configuration, it offers low conduction losses with a maximum drain-source resistance of 0.0052 ohms.
This enhancement mode device features a typical gate charge of 43.1 nC at Vgs of 4 V and supports gate-source voltage swings up to ±25 V, making it suitable for efficient switching circuits.
The MOSFET supports a maximum power dissipation of 48 W and operates reliably across a wide temperature range from -55°C to 150°C, ensuring durability in industrial, automotive, and power management environments.
With compact dimensions (5.99 mm x 5 mm x 1.07 mm), the SI7149ADP-T1-GE3 is ideal for PCBs with constrained space. It also meets lead-free manufacturing standards, aligning with environmental compliance requirements.
Applications include industrial power regulation, switching power supplies, motor control, and automotive electronics where efficient, reliable P-channel MOSFET performance is critical.
Surface mount package suitable for automated assembly processes. Low Rds(on) reduces heat generation and increases efficiency. Wide voltage and current ratings suit diverse power applications. Robust thermal handling supports demanding operating conditions.
Compliance with RoHS for environmentally conscious manufacturing. Explore the full range of Vishay semiconductor components at EnvMart for your high-reliability and high-efficiency electronic design projects.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It has a maximum power dissipation rating of 48 W.
The maximum drain-source resistance is 0.0052 ohms.
The typical gate charge at a gate-source voltage of 4 V is 43.1 nC.
The operating temperature range is from -55°C to 150°C.
The dimensions of the package are 5.99 mm in length, 5 mm in width, and 1.07 mm in height.
This model uses surface mount technology.
The forward voltage drop is 0.74 V.
The maximum gate-source voltage is ±25 V.
Yes, it meets lead-free manufacturing standards.
This MOSFET is suitable for applications such as industrial power regulation, switching power supplies, motor control, and automotive electronics.
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