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Infineon Single IGBT Module 825 A 3300 V AG-IHVB130 FZ825R33HE4DBPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 109.9mm |
| Model | FZ825R33HE4DBPSA1 |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-IHVB130 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | 60749, 60068, IEC 60747 |
| Maximum Continuous Collector Current Ic | 825A |
| Maximum Collector Emitter Voltage Vceo | 3300V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.65V |
| Maximum Power Dissipation Pd | 2400kW |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| Number of Transistors | 2 |
Key Features
- Integrated TRENCHSTOP™ IGBT4 and emitter controlled diode increase efficiency.
- The module features a high power dissipation rating of 2400 kW.
- Robust AlSiC base plate provides enhanced thermal cycling capability.
- Operates reliably from -40°C to 150°C ambient temperature range.
- Maximum gate emitter voltage rated at ±20 V for robust gate control.
- Low saturation voltage of 2.65 V minimizes conduction losses.
- Compact dimensions with length 109.9 mm and height 16.4 mm.
- Compliance with standards IEC 60749, 60068, and IEC 60747 ensures quality and reliability.
Product Description
The Infineon FZ825R33HE4DBPSA1 single IGBT module features cutting-edge TRENCHSTOP™ IGBT4 technology combined with an emitter controlled diode, delivering exceptional efficiency and high power density in power electronic systems. This module supports a maximum continuous collector current of 825 A with a maximum collector emitter voltage rating of 3300 V, suitable for demanding industrial environments.
Its design incorporates an AlSiC base plate that significantly enhances thermal cycling capabilities, ensuring durability and reliable performance over prolonged operating periods. The module's conduction losses are minimized by a low collector emitter saturation voltage of 2.65 V, improving overall system efficiency.
Operating temperature ranges from a minimum of -40°C up to a maximum of 150°C, making it suitable for harsh industrial and manufacturing environments. The module's gate characteristics support a maximum gate emitter voltage of ±20 V, allowing robust switching control and protection.
Measuring 109.9 mm in length and 16.4 mm in height, this AG-IHVB130 package type offers a compact form factor optimized for integration into power converter and inverter assemblies.
Extensively tested and compliant with industrial standards IEC 60749, 60068, and IEC 60747, this IGBT module assures quality and reliable performance for electronics, manufacturing, and power management applications. Please note that it is not designed for automotive use.
Integrated TRENCHSTOP™ IGBT4 and emitter controlled diode for improved switching efficiency. High maximum continuous collector current of 825 A. Maximum collector emitter voltage of 3300 V for high voltage applications. Robust AlSiC base plate enhances thermal cycling endurance.
Low saturation voltage reduces energy losses and heat generation. Wide operating temperature range from -40°C to 150°C. Compact AG-IHVB130 package with precise physical dimensions. Meets IEC 60749, 60068, and IEC 60747 industrial standards.
Single transistor configuration suitable for specialized power electronic circuits. Not automotive standard compliant.
This powerful IGBT Module is ideal for industrial power electronics, manufacturing equipment, energy conversion systems, and other heavy-duty electrical systems requiring high current switching and control precision. Explore more Infineon semiconductor products and industrial electronics solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this module is 825 A.
This IGBT module has a maximum collector emitter voltage rating of 3300 V.
It operates reliably within a temperature range of -40°C to 150°C.
The module features a maximum power dissipation rating of 2400 kW.
This model has a single transistor configuration.
It measures 109.9 mm in length and 16.4 mm in height.
The maximum gate emitter voltage for this module is rated at ±20 V.
It complies with industrial standards IEC 60749, 60068, and IEC 60747.
The maximum collector emitter saturation voltage is 2.65 V.
It features an emitter controlled diode combined with TRENCHSTOP™ IGBT4 technology.
The country of origin for this IGBT module is India.
This module is suitable for industrial power electronics, manufacturing equipment, and energy conversion systems.
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