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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 38.5mm |
| Length | 190mm |
| Model | FZ1800R45HL4S7BPSA1 |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-IHVB190 |
| Minimum Operating Temperature | -40°C |
| Maximum Continuous Collector Current Ic | 1.8kA |
| Maximum Collector Emitter Voltage Vceo | 4500V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.15V |
| Maximum Power Dissipation Pd | 4000kW |
| Maximum Gate Emitter Voltage VGEO | 25 V |
| Number of Transistors | 3 |
Infineon FZ1800R45HL4S7BPSA1 is a high-power single IGBT module tailored for industrial, power electronics, and HVDC applications where high DC stability and dynamic robustness are essential.
This module features Trench/Field Stop IGBT4 technology and an emitter controlled 4 diode integrated with an isolated AlSiC base plate, optimizing electrical performance and thermal management.
The device operates with a maximum continuous collector current of 1.8 kA and withstands collector emitter voltages up to 4500 V, suitable for high voltage converter applications. Its maximum power dissipation rating of 4000 kW ensures reliable operation under demanding electrical load conditions.
The package type AG-IHVB190 offers mechanical stability and effective heat dissipation necessary for high-performance power modules. This IGBT module includes 3 transistors in a single package configuration, enabling compact design integration.
It supports a maximum gate emitter voltage of 25 V and exhibits a low maximum collector emitter saturation voltage of 3.15 V, contributing to efficient switching behavior and reduced losses.
Operational temperature range from -40°C to 150°C broadens its application scope in various industrial and power system environments. This module is ideal for industrial power electronics, HVDC converters, motor drives, and renewable energy systems.
It provides high short circuit capability, ensuring robustness during fault conditions. The isolated AlSiC base plate improves thermal conductivity and reduces weight compared to conventional modules. Designed for high power density and dynamic switching performance in demanding environments.
Package dimensions are 190 mm in length and 38.5 mm in height, allowing for integration in compact layouts. Explore more Infineon IGBT Modules for diverse power electronic solutions on EnvMart.
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