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Infineon Single IGBT Module 1.8 kA 4500 V Maximum Power Dissipation 4000kW AG-IHVB190 FZ1800R45HL4S7BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 38.5mm
Length 190mm
Model FZ1800R45HL4S7BPSA1
Configuration Single
Maximum Operating Temperature 150°C
Package Type AG-IHVB190
Minimum Operating Temperature -40°C
Maximum Continuous Collector Current Ic 1.8kA
Maximum Collector Emitter Voltage Vceo 4500V
Maximum Collector Emitter Saturation Voltage VceSAT 3.15V
Maximum Power Dissipation Pd 4000kW
Maximum Gate Emitter Voltage VGEO 25 V
Number of Transistors 3

Key Features

  • This module supports a maximum continuous collector current of 1.8 kA.
  • Maximum collector emitter voltage rating is 4500 V.
  • It features a maximum power dissipation capacity of 4000 kW.
  • Equipped with 3 transistors in a single configuration.
  • Package type is AG-IHVB190 ensuring effective heat dissipation.
  • The maximum gate emitter voltage is rated at 25 V.
  • Collector emitter saturation voltage is 3.15 V for efficient switching.
  • Operates reliably in a temperature range from -40°C to 150°C.

Product Description

Infineon FZ1800R45HL4S7BPSA1 is a high-power single IGBT module tailored for industrial, power electronics, and HVDC applications where high DC stability and dynamic robustness are essential.

This module features Trench/Field Stop IGBT4 technology and an emitter controlled 4 diode integrated with an isolated AlSiC base plate, optimizing electrical performance and thermal management.

The device operates with a maximum continuous collector current of 1.8 kA and withstands collector emitter voltages up to 4500 V, suitable for high voltage converter applications. Its maximum power dissipation rating of 4000 kW ensures reliable operation under demanding electrical load conditions.

The package type AG-IHVB190 offers mechanical stability and effective heat dissipation necessary for high-performance power modules. This IGBT module includes 3 transistors in a single package configuration, enabling compact design integration.

It supports a maximum gate emitter voltage of 25 V and exhibits a low maximum collector emitter saturation voltage of 3.15 V, contributing to efficient switching behavior and reduced losses.

Operational temperature range from -40°C to 150°C broadens its application scope in various industrial and power system environments. This module is ideal for industrial power electronics, HVDC converters, motor drives, and renewable energy systems.

It provides high short circuit capability, ensuring robustness during fault conditions. The isolated AlSiC base plate improves thermal conductivity and reduces weight compared to conventional modules. Designed for high power density and dynamic switching performance in demanding environments.

Package dimensions are 190 mm in length and 38.5 mm in height, allowing for integration in compact layouts. Explore more Infineon IGBT Modules for diverse power electronic solutions on EnvMart.

Infineon Single IGBT Module 1.8 kA 4500 V Maximum Power Dissipation 4000kW AG-IHVB190 FZ1800R45HL4S7BPSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT module is 1.8 kA.

This module has a maximum collector emitter voltage rating of 4500 V.

It features a maximum power dissipation capacity of 4000 kW.

The package type is AG-IHVB190, which ensures effective heat dissipation.

It operates reliably in a temperature range from -40°C to 150°C.

This IGBT module includes 3 transistors in a single configuration.

The maximum gate emitter voltage is rated at 25 V.

The maximum collector emitter saturation voltage is 3.15 V.

This module is suitable for industrial power electronics, HVDC converters, motor drives, and renewable energy systems.

The dimensions are 190 mm in length and 38.5 mm in height.

It features Trench/Field Stop IGBT4 technology, optimizing electrical performance and thermal management.

The country of origin for this module is India.

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