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Infineon N-Channel Single IGBT Module 1800 A 4500 V AG-IHVB190 FZ1800R45HL4BPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 38.5mm |
| Length | 190mm |
| Model | FZ1800R45HL4BPSA1 |
| Width | 140mm |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-IHVB190 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | IEC 60747, 60749 and 60068 |
| Maximum Continuous Collector Current Ic | 1800A |
| Maximum Collector Emitter Voltage Vceo | 4500V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 4000kW |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| Number of Transistors | 3 |
Key Features
- Maximum continuous collector current of 1800 A ensures robust power handling.
- Collector-emitter voltage rating of 4500 V supports demanding high-voltage applications.
- Compact module dimensions of 190 x 140 x 38.5 mm facilitate flexible system integration.
- Low collector-emitter saturation voltage of 3.5 V enhances energy efficiency.
- Emitter-controlled diode design improves short-circuit current handling.
- High dynamic robustness supports reliable operation under varying load conditions.
- Operating temperature range from -40°C to 150°C ensures versatile use.
- Compliant with IEC 60747, 60749, and 60068 standards for durability and safety.
Product Description
The Infineon FZ1800R45HL4BPSA1 is a high-performance N-Channel Single IGBT Module engineered for industrial power electronics applications. This module delivers a maximum continuous collector current of 1800 A and withstands a maximum collector-emitter voltage of 4500 V, suited for demanding environments requiring high power and voltage tolerance.
Its compact dimensions of 190 mm length, 140 mm width, and 38.5 mm height allow flexible integration into various power converter systems. The AG-IHVB190 package encompasses three transistors configured as a single channel, optimizing power density.
Notably, the device features a low collector-emitter saturation voltage of 3.5 V, reducing power losses and improving overall efficiency. The emitter-controlled 4 diode design enhances short-circuit current capability, providing robust protection against transient events.
This IGBT module operates reliably within a temperature range from -40°C to 150°C, suitable for industrial automation, medium-voltage converters, power transmission, and distribution networks. It adheres to international standards IEC 60747, IEC 60749, and IEC 60068, ensuring compliance with rigorous quality and safety norms.
High DC stability maintains consistent performance under challenging conditions. Emitter-controlled diodes enable excellent short-circuit ruggedness. Optimized gate capacitance enhances switching speed and efficiency. AlSiC base plate supports advanced thermal cycling and management.
Designed for high-power converters in industrial and utility sectors.
This Infineon IGBT module offers reliable and efficient performance critical for industrial, power electronics, manufacturing, and energy applications. Browse the Electronics & Electricals category for more IGBT Modules and semiconductor components on EnvMart.
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Frequently Asked Questions
The Infineon FZ1800R45HL4BPSA1 has a maximum continuous collector current of 1800 A, ensuring robust power handling for demanding applications.
This IGBT module supports a maximum collector-emitter voltage rating of 4500 V, making it suitable for high-voltage applications.
The module has compact dimensions of 190 mm in length, 140 mm in width, and 38.5 mm in height, facilitating flexible integration into systems.
It operates reliably within a temperature range of -40°C to 150°C, suitable for various industrial applications.
The Infineon FZ1800R45HL4BPSA1 features a single configuration with three transistors optimized for power density.
The maximum collector-emitter saturation voltage is 3.5 V, which enhances energy efficiency by reducing power losses.
It is compliant with IEC 60747, IEC 60749, and IEC 60068 standards, ensuring durability and safety in its applications.
The maximum power dissipation is rated at 4000 kW, supporting high-power applications in industrial settings.
The maximum gate-emitter voltage for this model is ±20 V, allowing for proper control of the device.
It features an emitter-controlled diode design, which improves short-circuit current handling and enhances overall robustness.
The design of this module supports high dynamic robustness, ensuring reliable operation under varying load conditions.
This IGBT module is designed for industrial automation, medium-voltage converters, and power transmission and distribution networks.
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