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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 109.9mm |
| Model | FZ1600R33HE4BPSA1 |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-IHVB130 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | IEC 60747, 60749 and 60068 |
| Maximum Continuous Collector Current Ic | 1600A |
| Maximum Collector Emitter Voltage Vceo | 3300V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.25V |
| Maximum Power Dissipation Pd | 3600kW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
Infineon FZ1600R33HE4BPSA1 Single IGBT Module is a high-performance semiconductor device engineered for power electronics applications. It supports a maximum continuous collector current of 1600 A and a collector emitter voltage rating of 3300 V, making it suitable for demanding industrial environments.
This single switch module utilizes TRENCHSTOP™ IGBT4 technology combined with an Emitter Controlled 4 diode configuration. These features provide high power density and efficient switching characteristics, making it ideal for applications requiring high reliability and thermal cycling capabilities.
The module's package type AG-IHVB130 offers a compact form factor with a length of 109.9 mm and height of 16.4 mm. The device operates reliably within a temperature range from -40°C to 150°C. It supports a maximum power dissipation of 3600 kW, enabling robust performance under heavy load conditions.
Safety and quality standards are met with IEC certifications 60747, 60749, and 60068, ensuring compliance with international industrial requirements. This IGBT Module is widely used in industrial, manufacturing, and electronic power control applications where efficiency and durability are critical.
Equipped with TRENCHSTOP™ IGBT4 technology for improved performance. Includes Emitter Controlled 4 diode configuration for enhanced switching. High power dissipation capacity of 3600 kW supports demanding applications. Package type AG-IHVB130 with compact dimensions of 109.9 mm length and 16.4 mm height.
Operational temperature range from -40°C to 150°C ensures reliability under extreme conditions. Maximum gate emitter voltage of 20 V and collector emitter saturation voltage of 3.25 V. Complies with IEC 60747, 60749, and 60068 standards.
Designed for industrial power electronics and control systems. Explore the extensive range of Infineon semiconductor modules at EnvMart for advanced power management solutions.
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