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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 109.9mm |
| Model | FZ1600R33HE4BPSA1 |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-IHVB130 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | IEC 60747, 60749 and 60068 |
| Maximum Continuous Collector Current Ic | 1600A |
| Maximum Collector Emitter Voltage Vceo | 3300V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.25V |
| Maximum Power Dissipation Pd | 3600kW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
Infineon FZ1600R33HE4BPSA1 Single IGBT Module is engineered for high power density applications requiring a continuous collector current of 1600 A and a maximum collector emitter voltage of 3300 V. Utilizing advanced TRENCHSTOP™ IGBT4 technology coupled with an emitter controlled 4 diode, this power module provides superior efficiency and reliability.
The module's AlSiC base plate enhances thermal cycling capability, making it suitable for demanding industrial environments, including power electronics, manufacturing equipment, and heavy machinery. It supports a maximum power dissipation of 3600 kW, enabling robust performance under high loads.
Designed with a compact AG-IHVB130 package, the module measures 109.9 mm in length and 16.4 mm in height, facilitating easy integration into existing power systems and electronic controls. It operates within a wide temperature range from -40°C to 150°C, ensuring stable operation across diverse conditions.
This single transistor configuration with two transistors offers precise control over switching, making it ideal for industrial automated systems and power conversion processes. The device complies with IEC 60747, 60749, and 60068 standards, guaranteeing product quality and durability.
TRENCHSTOP™ IGBT4 technology with emitter controlled diode for increased efficiency. High continuous current capacity of 1600 A for demanding power applications. 3300 V collector emitter voltage supports high voltage industrial systems.
Robust AlSiC base plate enhances thermal performance and longevity. Compact dimensions allow flexible use in power modules and assembly lines. Wide operating temperature range ensures stable function under varied conditions.
Complies with international IEC standards for semiconductor quality. Tray packaging enables streamlined production and easy equipment insertion. Not automotive certified but suitable for industrial and power electronics sectors.
Suitable for use in industrial power converters, inverters, and motor drives.
This Infineon Single IGBT Module FZ1600R33HE4BPSA1 is an essential component in industrial power control applications, offering high efficiency, durability, and reliable performance. Its technical properties make it an excellent choice for manufacturing and HVAC systems requiring robust power semiconductors. Explore more modules like this in the IGBT category on EnvMart for your industrial semiconductor needs.
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