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Infineon Single IGBT Module 1600 A 3300 V with AG-IHVB130 Package Type FZ1600R33HE4BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.4mm
Length 109.9mm
Model FZ1600R33HE4BPSA1
Configuration Single
Maximum Operating Temperature 150°C
Package Type AG-IHVB130
Minimum Operating Temperature -40°C
Standards/Approvals IEC 60747, 60749 and 60068
Maximum Continuous Collector Current Ic 1600A
Maximum Collector Emitter Voltage Vceo 3300V
Maximum Collector Emitter Saturation Voltage VceSAT 3.25V
Maximum Power Dissipation Pd 3600kW
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 2

Key Features

  • This module features TRENCHSTOP™ IGBT4 technology with emitter controlled 4 diode for enhanced efficiency.
  • High power dissipation rating of 3600 kW supports robust industrial applications.
  • Designed with an AlSiC base plate to improve thermal cycling capability for durability.
  • Operates reliably between -40°C and 150°C operating temperature range.
  • Maximum gate emitter voltage of 20 V and collector emitter saturation voltage of 3.25 V.
  • Complies with IEC 60747, 60749, and 60068 standards ensuring industrial quality.
  • Compact form factor with length 109.9 mm and height 16.4 mm suitable for machine integration.
  • Configured as a single transistor module with two transistors for enhanced control.

Product Description

Infineon FZ1600R33HE4BPSA1 Single IGBT Module is engineered for high power density applications requiring a continuous collector current of 1600 A and a maximum collector emitter voltage of 3300 V. Utilizing advanced TRENCHSTOP™ IGBT4 technology coupled with an emitter controlled 4 diode, this power module provides superior efficiency and reliability.

The module's AlSiC base plate enhances thermal cycling capability, making it suitable for demanding industrial environments, including power electronics, manufacturing equipment, and heavy machinery. It supports a maximum power dissipation of 3600 kW, enabling robust performance under high loads.

Designed with a compact AG-IHVB130 package, the module measures 109.9 mm in length and 16.4 mm in height, facilitating easy integration into existing power systems and electronic controls. It operates within a wide temperature range from -40°C to 150°C, ensuring stable operation across diverse conditions.

This single transistor configuration with two transistors offers precise control over switching, making it ideal for industrial automated systems and power conversion processes. The device complies with IEC 60747, 60749, and 60068 standards, guaranteeing product quality and durability.

TRENCHSTOP™ IGBT4 technology with emitter controlled diode for increased efficiency. High continuous current capacity of 1600 A for demanding power applications. 3300 V collector emitter voltage supports high voltage industrial systems.

Robust AlSiC base plate enhances thermal performance and longevity. Compact dimensions allow flexible use in power modules and assembly lines. Wide operating temperature range ensures stable function under varied conditions.

Complies with international IEC standards for semiconductor quality. Tray packaging enables streamlined production and easy equipment insertion. Not automotive certified but suitable for industrial and power electronics sectors.

Suitable for use in industrial power converters, inverters, and motor drives.

This Infineon Single IGBT Module FZ1600R33HE4BPSA1 is an essential component in industrial power control applications, offering high efficiency, durability, and reliable performance. Its technical properties make it an excellent choice for manufacturing and HVAC systems requiring robust power semiconductors. Explore more modules like this in the IGBT category on EnvMart for your industrial semiconductor needs.

Infineon Single IGBT Module 1600 A 3300 V with AG-IHVB130 Package Type FZ1600R33HE4BPSA1
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Frequently Asked Questions

The maximum continuous collector current of this IGBT module is 1600 A.

The maximum collector emitter voltage for this model is 3300 V.

This module has a length of 109.9 mm and a height of 16.4 mm.

It operates reliably within a temperature range of -40°C to 150°C.

The maximum power dissipation rating is 3600 kW.

This model is designed with an AG-IHVB130 package type.

It features TRENCHSTOP™ IGBT4 technology with an emitter controlled 4 diode for enhanced efficiency.

The module complies with IEC 60747, 60749, and 60068 standards.

This module is configured with two transistors.

The maximum gate emitter voltage is 20 V.

The maximum collector emitter saturation voltage is 3.25 V.

This IGBT module is suitable for industrial power converters, inverters, and motor drives.

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