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Microchip N-Channel MOSFET TO-39 350mA 90V Enhancement 3-Pin 2N6661
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 6.6mm |
| Model | 2N6661 |
| Width | 9.398mm |
| Mount Type | Through Hole |
| Series | 2N6661 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-39 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 350mA |
| Maximum Drain Source Voltage Vds | 90V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.25W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
| Drivers | relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc |
Key Features
- This enhancement mode MOSFET features low drain-source resistance of 5 ohms and high input impedance.
- It supports a maximum gate-source voltage of 20V and maximum power dissipation of 6.25W.
- Operating temperature range extends from -55°C up to 150°C, ensuring thermal stability.
- Designed with a vertical DMOS structure for efficient switching and conduction losses reduction.
- Integral source-drain diode and low input capacitance enable fast switching speeds.
- Suitable for relays, motor controls, power supply circuits, amplifiers, and driver applications.
- Through-hole mount with 3 pins for easy PCB integration.
Product Description
Microchip 2N6661 is a robust N-Channel MOSFET in a TO-39 through-hole package designed for reliable electronic switching and amplification with a maximum drain-source voltage rating of 90V and continuous drain current of 350mA.
This enhancement mode device uses a vertical DMOS structure and silicon gate manufacturing process, combining the power handling of bipolar transistors with the high input impedance and thermal stability of MOS devices. It offers a low drain-source resistance of 5 ohms at gate-source voltage of 10V, making it efficient for switching applications.
The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, providing excellent thermal stability and is free from secondary breakdown under thermal stress. It supports a maximum gate-source voltage of 20V and a power dissipation capability of 6.25 watts.
Integral source-drain diode and low input capacitance contribute to fast switching speeds and reduced power drive requirements. This makes it suitable for a range of industrial and commercial electronic applications including amplifiers, converters, motor controls, relay drivers, solenoids, lamps, memories, and displays.
The device’s through-hole mount and 3-pin configuration simplify PCB assembly and maintenance in electronic designs requiring reliable power MOSFET performance. This enhancement mode MOSFET features low drain-source resistance of 5 ohms and high input impedance.
It supports a maximum gate-source voltage of 20V and maximum power dissipation of 6.25W. Operating temperature range extends from -55°C up to 150°C, ensuring thermal stability. Designed with a vertical DMOS structure for efficient switching and conduction losses reduction.
Integral source-drain diode and low input capacitance enable fast switching speeds. Suitable for relays, motor controls, power supply circuits, amplifiers, and driver applications. Through-hole mount with 3 pins for easy PCB integration.
The Microchip 2N6661 MOSFET is ideal for industrial, commercial, and laboratory electronic applications requiring efficient switching, power handling, and thermal reliability. Browse similar MOSFET and discrete semiconductor products from Microchip and other leading manufacturers at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 350mA.
This MOSFET has a maximum drain-source voltage rating of 90V.
The maximum power dissipation capability of the 2N6661 is 6.25W.
The operating temperature range for the 2N6661 extends from -55°C to 150°C.
This model uses a through-hole mounting type with 3 pins for PCB integration.
The maximum gate-source voltage for the 2N6661 is 20V.
The drain-source resistance at a gate-source voltage of 10V is 5 ohms.
This MOSFET is suitable for applications such as relays, motor controls, power supply circuits, amplifiers, and driver applications.
The height of this model is 6.6mm and the width is 9.398mm.
The 2N6661 features an N-channel type.
This model complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
The forward voltage for this MOSFET is 900mV.
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