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onsemi General Purpose NPN Transistor 100 mA 50 V dc 5-Pin SOT-353 NSB1706DMW5T1G

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onsemi General Purpose NPN Transistor 100 mA 50 V dc 5-Pin SOT-353 NSB1706DMW5T1G

Name: onsemi General Purpose NPN Transistor 100 mA 50 V dc 5-Pin SOT-353 NSB1706DMW5T1G
Brand: onsemi
SKU: 243350
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	NSB1706DMW5T1G
Width	2.2mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-353
Minimum Operating Temperature	-55°C
Pin Count	5
Maximum Collector Emitter Voltage Vceo	50V dc
Minimum DC Current Gain hFE	80
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	50V dc
Maximum Power Dissipation Pd	385mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Common Emitter

Key Features

Supports a maximum DC collector current of 100 mA.
Maximum collector-emitter voltage of 50 V DC ensures reliable switching performance.
Surface mount 5-Pin SOT-353 package suitable for compact PCB designs.
Common emitter transistor configuration for versatile circuit integration.
Operating temperature range from -55°C to 150°C for wide environmental tolerance.
Maximum power dissipation rating of 385 mW for efficient heat management.
Minimum DC current gain (hFE) of 80 ensures good amplification characteristics.
No automotive standard compliance; intended for general electronic applications.

Product Description

onsemi NSB1706DMW5T1G is a general purpose NPN bipolar transistor ideal for low power amplification and switching applications. It features a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage up to 50 V DC, making it suitable for a broad range of circuits including industrial, consumer electronics, and communication devices.

Packaged in a compact 5-Pin SOT-353 surface mount package, this transistor facilitates space-saving designs on printed circuit boards (PCBs). The device operates reliably over a temperature range from -55°C to 150°C, allowing deployment in various environmental conditions.

The common emitter configuration and a minimum DC current gain (hFE) of 80 provide dependable amplification and switching capabilities. With a maximum power dissipation of 385 mW, thermal management considerations remain manageable in typical circuit layouts.

Its physical dimensions (2.2 mm by 2.2 mm by 1.1 mm) support high-density integration in modern electronic assemblies. The transistor does not have automotive standard certification but meets general discrete semiconductor quality norms.

Supports maximum collector current of 100 mA. Endures maximum collector-emitter voltage of 50 V DC. Compact 5-Pin SOT-353 surface mount package. Common emitter transistor configuration. Wide operating temperature range from -55°C to 150°C.

Power dissipation maximum of 385 mW. Minimum DC current gain hFE of 80. Physical size: 2.2 mm length by 2.2 mm width by 1.1 mm height. Intended for electronic applications without automotive certification. Pin count: 5 pins.

This transistor is well suited for applications in industrial control systems, communication equipment, and other electronic circuitry requiring reliable low-power Bipolar Transistors.

Discover similar transistor components and related semiconductor products within EnvMart’s comprehensive electronics catalog. Enhance your design and manufacturing process by selecting onsemi NSB1706DMW5T1G for efficiency and performance.