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onsemi High Voltage NPN Transistor 5 A DC Collector Current, 450 V Collector Emitter Voltage, TO-220 Package BUT11AFTU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 28.85mm |
| Length | 10.16mm |
| Model | BUT11AFTU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | BUT11AFTU |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 450V |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 1000V |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
Key Features
- This transistor features a 3-pin TO-220 through-hole package.
- Offers maximum power dissipation of 40 watts ensuring reliable thermal performance.
- Designed with a collector-base voltage rating of 1000 V for high-voltage circuit applications.
- Operates at maximum temperature of 150°C suitable for demanding industrial environments.
- Provides emitter-base voltage rating of 9 V with NPN transistor polarity.
- Compact dimensions with length 10.16 mm, height 28.85 mm, and width 4.7 mm.
- Meets RoHS compliance standards promoting environmental safety.
- Ideal for use in power switching and amplification in electronics and electrical circuits.
Product Description
onsemi BUT11AFTU is a high voltage NPN bipolar junction transistor optimized for power electronic applications. It can handle a maximum DC collector current of 5 A and withstands collector emitter voltages up to 450 V, making it highly suitable for switching and amplification duties in industrial and consumer electronics.
This transistor comes in a robust 3-pin TO-220 package with through-hole mounting, facilitating easy integration into PCB assemblies. It offers a maximum power dissipation rating of 40 W, allowing it to sustain significant power loads while maintaining thermal stability at operating temperatures up to 150°C.
The device features a maximum collector-base voltage of 1000 V and an emitter-base voltage of 9 V, ensuring reliable performance under high-voltage conditions. Its compact physical size of 10.16 mm length, 28.85 mm height, and 4.7 mm width supports space-constrained applications.
Designed to meet RoHS standards, it provides an eco-friendly choice for modern electronic designs. Typical applications include power supply circuits, motor control, power amplifiers, and general purpose switching, especially in automotive, industrial, and consumer electronic environments.
This transistor features a 3-pin TO-220 through-hole package. Offers maximum power dissipation of 40 watts ensuring reliable thermal performance. Designed with a collector-base voltage rating of 1000 V for high-voltage circuit applications.
Operates at maximum temperature of 150°C suitable for demanding industrial environments. Provides emitter-base voltage rating of 9 V with NPN transistor polarity. Compact dimensions with length 10.16 mm, height 28.85 mm, and width 4.7 mm.
Meets RoHS compliance standards promoting environmental safety. Ideal for use in power switching and amplification in electronics and electrical circuits. Explore the Electronics & Electricals section at EnvMart for a wide range of semiconductors and power transistors suitable for diverse industrial and commercial applications.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for the onsemi BUT11AFTU is 5 A.
This model has a collector-emitter voltage rating of 450 V.
It comes in a TO-220 package, which is a 3-pin through-hole type.
The maximum power dissipation for this transistor is 40 W.
The dimensions are 10.16 mm in length, 28.85 mm in height, and 4.7 mm in width.
It can operate at a maximum temperature of 150°C.
The emitter-base voltage rating is 9 V.
This transistor has a maximum collector-base voltage rating of 1000 V.
Yes, the onsemi BUT11AFTU meets RoHS compliance standards.
It is suitable for power switching and amplification in various electronics and electrical circuits.
The BUT11AFTU is an NPN bipolar junction transistor.
This model has a pin count of 3.
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