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onsemi High Voltage NPN Transistor, 300 mA Collector Current, 400 V Collector-Emitter Voltage, TO-92 Package KSP44TF

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model KSP44TF
Width 4.19mm
Mount Type Through Hole
Series KSP44
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 500V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 300mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor features a maximum DC collector current of 300 mA.
  • It has a maximum collector-emitter voltage (Vceo) rating of 400 V.
  • The package type is TO-92 suitable for through-hole mounting.
  • It offers a minimum DC current gain (hFE) of 40.
  • The maximum power dissipation is 625 mW allowing reliable operation in varied circuits.
  • Operating temperature can reach up to 150°C.
  • Pin count is 3, configured as a single transistor.
  • Maximum transition frequency is 1 MHz, compatible with switching applications.

Product Description

onsemi KSP44TF is a high voltage NPN bipolar junction transistor (BJT) housed in a 3-pin TO-92 package. This transistor supports a maximum DC collector current of 300 mA and a collector-emitter voltage rating of 400 V, suitable for a variety of electronic applications that require medium power switching and amplification.

The device is designed for through-hole mounting, simplifying integration into PCB assemblies. The transistor's minimum DC current gain (hFE) is guaranteed to be 40, providing a good balance between gain and frequency response. With a maximum power dissipation of 625 mW, the KSP44TF offers reliable performance and thermal stability.

This transistor supports a maximum operating temperature of up to 150°C, making it suitable for demanding environments. It features a transition frequency of 1 MHz which is adequate for switching and signal amplification in industrial, consumer electronics, and embedded applications.

The high voltage ratings, including a collector base voltage of 500 V and emitter base voltage of 6 V, make this transistor a robust choice for circuits requiring high voltage isolation and durability.

The physical dimensions of the device are compact, with a height of 20.95 mm, length of 5.2 mm, and width of 4.19 mm, facilitating versatile use in space-constrained designs. This transistor is ideal for use in industrial, consumer electronics, automotive, and general-purpose electronic circuit designs.

It is suitable for amplification, switching, and signal processing applications within operating parameters. Package design provides high reliability and easy mounting on printed circuit boards. The device complies with RoHS standards, ensuring environmentally responsible manufacturing.

Set includes 1 Pc onsemi KSP44TF High Voltage NPN Transistor TO-92 package. Explore the 'Bipolar Transistors' category on EnvMart for related semiconductor components from trusted brands.

onsemi High Voltage NPN Transistor, 300 mA Collector Current, 400 V Collector-Emitter Voltage, TO-92 Package KSP44TF
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Frequently Asked Questions

The maximum DC collector current for this transistor is 300 mA.

It has a maximum collector-emitter voltage (Vceo) rating of 400 V.

This transistor is housed in a TO-92 package, suitable for through-hole mounting.

The minimum DC current gain (hFE) is guaranteed to be 40.

The maximum power dissipation for this model is 625 mW.

It can operate at a maximum temperature of 150°C.

The dimensions are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The maximum transition frequency is 1 MHz, making it suitable for switching applications.

It is an NPN bipolar junction transistor (BJT).

The KSP44TF has a pin count of 3, configured as a single transistor.

The maximum emitter-base voltage (VEBO) is 6 V.

It is suitable for amplification, switching, and signal processing applications within its operating parameters.

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