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onsemi High Voltage NPN Bipolar Junction Transistor 300 mA, 400 V, 3-Pin TO-92 KSP44TF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.95mm |
| Length | 5.2mm |
| Model | KSP44TF |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | KSP44 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 500V |
| Maximum Power Dissipation Pd | 625mW |
| Maximum DC Collector Current Idc | 300mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- High voltage NPN bipolar junction transistor suitable for various electronic applications.
- Maximum DC collector current of 300 mA providing efficient switching capabilities.
- Collector emitter voltage rating of 400 V for high voltage tolerance.
- Compact 3-pin TO-92 through-hole package for easy PCB mounting.
- Maximum power dissipation of 625 mW enabling moderate power operations.
- Minimum DC current gain hFE of 40 ensures adequate amplification.
- Maximum collector base voltage of 500 V extends device robustness.
- Maximum transition frequency of 1 MHz suitable for switching and amplification.
Product Description
onsemi KSP44TF is a high voltage NPN bipolar junction transistor designed for reliable operation in a variety of electronic circuits. It supports a maximum DC collector current of 300 mA and withstands collector emitter voltages up to 400 V. Its 3-pin TO-92 through-hole package ensures easy integration on printed circuit boards, commonly used in power switching, amplification, and signal processing applications.
This transistor provides a minimum DC current gain of 40 and can dissipate up to 625 mW power, making it suitable for moderate power analog and switching tasks. It features a maximum collector base voltage of 500 V and a maximum transition frequency of 1 MHz, balancing high voltage performance with switching speed.
Built for durability, the KSP44TF transistor operates reliably in temperatures up to 150°C. Its compact size (20.95 mm height, 5.2 mm length, and 4.19 mm width) supports space-efficient designs in industrial, consumer electronics, and automotive circuit boards.
High voltage NPN bipolar junction transistor for diverse circuit needs. Supports 300 mA maximum DC collector current for effective switching. 400 V maximum collector emitter voltage rating ensures robust operation. Through-hole 3-pin TO-92 package allows straightforward PCB mounting.
Minimum current gain hFE of 40 for amplification reliability. Maximum power dissipation rating of 625 mW for moderate power applications. Max collector base voltage 500 V protecting device integrity. Transition frequency of 1 MHz for a balance of speed and control.
Operates safely at temperatures up to 150°C for thermal stability. Compact form factor suitable for various industrial and commercial electronics.
Ideal for electronic, industrial, and automotive applications, the onsemi KSP44TF transistor offers reliable performance with high voltage and current handling capabilities. Explore more on semiconductor components at EnvMart for your engineering and manufacturing needs.
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Frequently Asked Questions
The maximum DC collector current for this transistor is 300 mA, allowing for efficient switching capabilities.
It has a collector emitter voltage rating of 400 V, which ensures high voltage tolerance during operation.
This transistor comes in a compact 3-pin TO-92 through-hole package, facilitating easy PCB mounting.
The KSP44TF can dissipate a maximum power of 625 mW, making it suitable for moderate power applications.
It has a minimum DC current gain (hFE) of 40, ensuring adequate amplification for various applications.
The maximum transition frequency is 1 MHz, suitable for both switching and amplification tasks.
The dimensions are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width, supporting space-efficient designs.
The maximum collector base voltage is 500 V, which enhances the device's robustness.
This transistor operates reliably at temperatures up to 150°C, providing thermal stability in various applications.
It is an NPN bipolar junction transistor, designed for reliable operation in a variety of electronic circuits.
The mount type for this transistor is through hole, allowing for straightforward integration into printed circuit boards.
This model is suitable for power switching, amplification, and signal processing applications in electronic circuits.
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