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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.2mm |
| Length | 5.1mm |
| Model | KSC2328AYTA |
| Width | 4.1mm |
| Mount Type | Through Hole |
| Series | KSC2328A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
| Diodes Inc APT13003LZTR-G1 NPN Transistor, 800 mA, 700 V, 3-Pin TO-92Brand | DiodesZetex |
onsemi KSC2328AYTA is a Small Signal NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications in electronics.
This transistor supports a maximum collector current of 2 A and a collector-emitter voltage of up to 30 V, making it suitable for moderate power circuits. It is housed in a TO-92 3-pin package, which provides easy through-hole mounting for printed circuit boards.
The device offers a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 1 MHz, enabling efficient small signal amplification tasks in diverse applications such as industrial controls, consumer electronics, and signal processing circuits.
With a maximum power dissipation of 1 W and an operating temperature up to 150°C, it ensures reliable functionality under demanding thermal conditions. The compact size (length 5.1 mm, width 4.1 mm, height 21.2 mm) is optimal for space-constrained designs.
This transistor does not conform to specific automotive or special industry standards but remains a versatile component for a wide range of general electronic purposes. Capable of handling a maximum DC collector current of 2 A.
Maximum collector-emitter voltage rating of 30 V for reliable operation. Equipped with a TO-92 through-hole package suited for various mounting needs. Features a minimum DC current gain (hFE) of 100 for effective amplification.
Compact dimensions: length 5.1 mm, width 4.1 mm, height 21.2 mm. Maximum power dissipation of 1 W ensures durability under load. Maximum transition frequency of 1 MHz suitable for small signal applications. NPN transistor polarity designed for versatile circuit configurations.
Supports maximum operating temperature up to 150°C ensuring robust thermal performance. Three-pin layout facilitates easy integration into electronic circuits.
This onsemi transistor is widely applicable within industrial electronics, consumer devices, laboratory equipment, and educational projects where reliable small signal amplification and switching are required.
Explore the Electronics & Electricals category for more semiconductor components and complementary products at EnvMart.
Explore more products in our Bipolar Transistors category.
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