onsemi High Voltage 2 A NPN Transistor, TO-252 Package, 600 V, 50 W Power Dissipation KSC5502DTM

onsemi KSC5502DTM is a high voltage NPN bipolar junction transistor designed to handle currents up to 2 A and voltages up to 600 V. Packaged in a TO-252 3-pin surface mount case, this transistor provides excellent thermal dissipation with a power rating of 50 W, making it suitable for a range of industrial and electronic applications.

This transistor features a minimum DC current gain (hFE) of 8 and a maximum transition frequency of 1 MHz, making it ideal for switching and amplification in power supply circuits, signal processing, and other moderate-frequency uses. Its maximum collector-base voltage is 1200 V, and emitter-base voltage is rated at 12 V, ensuring high tolerance against voltage spikes.

The compact TO-252 package facilitates easy and reliable surface mounting with minimal PCB footprint. The maximum operating temperature of 150°C enables deployment in harsh or high-temperature environments commonly encountered in industrial electronics, automotive systems, and power converters.

Designed for high voltage applications with a maximum collector-emitter voltage of 600 V. Supports continuous collector current of up to 2 A for reliable operation. Surface mount TO-252 package ensures efficient thermal performance and compact size.

Maximum power dissipation rating of 50 W guarantees robust thermal management. Typical minimum DC current gain (hFE) is 8, suitable for switching applications. Maximum operating temperature of 150°C enables use in demanding environments.

Maximum transition frequency (ft) is 1 MHz, supporting moderate frequency circuits. Single transistor configuration with NPN polarity for versatile circuit design. Pin count of 3 compatible with standard transistor layouts.

Compact dimensions: length 10.67 mm, width 4.83 mm, height 10.41 mm.

This transistor is widely used in industrial electronics, power control circuits, switching regulators, and signal amplification tasks. It offers a reliable solution where high voltage and current capability is required in a compact surface mount form factor.

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