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onsemi High-Reliability 2 A PNP Bipolar Transistor, 50 V, TO-92 Package KSA1281YTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 22.7mm |
| Length | 5.1mm |
| Model | KSA1281YTA |
| Width | 4.1mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Supports a maximum collector current of 2 amperes.
- Maximum collector-emitter voltage rated at 50 volts.
- Designed in a compact TO-92 package suitable for space-constrained applications.
- Offers a minimum DC current gain (hFE) of 40 for reliable amplification.
- Maximum power dissipation is 1 watt, ensuring thermal stability.
- Maximum transition frequency is 1 MHz, suitable for low-frequency amplification.
- Operates safely up to 150°C maximum temperature.
- Features a 3-pin configuration for easy PCB integration.
Product Description
onsemi KSA1281YTA is a high-quality PNP bipolar transistor designed for discrete semiconductor applications requiring a maximum collector current of 2 A and voltage blocking capability up to 50 V. The transistor is encased in a compact TO-92 package, facilitating through-hole mounting on printed circuit boards.
This transistor features a single configuration with robust performance characteristics including a minimum current gain (hFE) of 40, maximum power dissipation of 1 W, and a transition frequency of 1 MHz, making it suitable for various low-frequency amplifier circuits and switching applications. It is rated for operation in environments up to 150°C, ensuring reliability in demanding industrial electronics, telecommunications, and automotive circuit designs.
The device has a collector-base voltage rating of -50 V and an emitter-base voltage rating of -5 V, with a standard 3-pin arrangement for emitter, base, and collector terminals. These properties make the KSA1281YTA an excellent choice for general-purpose amplification, switching circuits, and discrete component replacements in electronic design and manufacturing processes.
Supports a maximum collector current of 2 amperes. Maximum collector-emitter voltage rated at 50 volts. Compact TO-92 package suitable for through-hole mounting. Minimum DC current gain of 40 to ensure efficient amplification.
Maximum power dissipation capacity of 1 watt. Transition frequency of 1 MHz for low-frequency applications. Operating temperature up to 150°C for industrial reliability. Three-pin configuration for secure and simple PCB integration.
This transistor is ideal for use in industrial, electronic manufacturing, and automotive sectors requiring reliable discrete Bipolar Transistors. It offers compact size and dependable electrical characteristics for general-purpose semiconductor applications.
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Frequently Asked Questions
The KSA1281YTA supports a maximum collector current of 2 amperes.
This model has a maximum collector-emitter voltage rating of 50 volts.
The dimensions of the TO-92 package are 22.7 mm in height, 5.1 mm in length, and 4.1 mm in width.
It offers a minimum DC current gain (hFE) of 40, ensuring efficient amplification.
The maximum power dissipation capacity of this unit is 1 watt.
The maximum transition frequency is 1 MHz, suitable for low-frequency applications.
It operates safely up to a maximum temperature of 150°C.
This model is designed for through-hole mounting on printed circuit boards.
It features a 3-pin configuration for emitter, base, and collector terminals.
This transistor is a PNP type, suitable for various applications.
The collector-base voltage rating is -50 V and the emitter-base voltage rating is -5 V.
This transistor is suitable for general-purpose amplification, switching circuits, and discrete component replacements in electronic design and manufacturing processes.
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