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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.77mm |
| Length | 5.2mm |
| Model | KSA1015YTA |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | KSA1015 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 70 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 400mW |
| Maximum DC Collector Current Idc | -150mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi KSA1015YTA is a small signal PNP bipolar junction transistor housed in a TO-92 package. It supports a maximum DC collector current of -150 mA and a maximum collector-emitter voltage of -50 V, making it suitable for low power switching and amplification in electronic circuits.
This transistor is designed with a three-pin through-hole mounting type, facilitating easy insertion into printed circuit boards for reliable connections. Its configuration is a single transistor with a PNP polarity, widely used in analog and switching applications.
The device offers a maximum power dissipation of 400 mW and can operate at temperatures up to 150°C, ensuring durability and stability under varied working conditions. It has a minimum DC current gain (hFE) of 70, allowing sound amplification performance and a maximum transition frequency of 1 MHz, making it apt for low frequency electronic designs.
Physical dimensions of the KSA1015YTA transistor are compact, with height 21.77 mm, width 4.19 mm, and length 5.2 mm, fitting well in space-constrained electronic assemblies.
This transistor does not carry specific automotive certifications or approvals, making it suitable primarily for general purpose electronics, industrial, laboratory, and educational uses. It is ideal for incorporation in switching circuits, amplification stages, and small signal processing units.
This transistor features a maximum collector current of -150 mA and collector-emitter voltage of -50 V. It offers a power dissipation rating of 400 mW suitable for low power applications. The TO-92 package and through-hole mounting enhance ease of integration.
Compact size with dimensions 21.77 mm by 4.19 mm by 5.2 mm. Robust operation up to 150°C maximum temperature. Minimum DC current gain of 70 for efficient amplification. Maximum transition frequency of 1 MHz supporting low frequency signals.
PNP configuration and 3-pin layout for universal compatibility. Explore onsemi Bipolar Transistors and other semiconductor devices at EnvMart for industrial, electronics manufacturing, and laboratory applications.
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