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onsemi Small Signal PNP Transistor TO-92 Package, Maximum DC Collector Current -150 mA, Collector Emitter Voltage KSA1015YTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model KSA1015YTA
Width 4.19mm
Mount Type Through Hole
Series KSA1015
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 70
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 400mW
Maximum DC Collector Current Idc -150mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor has a maximum power dissipation of 400 mW providing reliable performance.
  • Designed with a single transistor configuration suitable for low power switching and amplification.
  • Pin count is 3 with a through-hole mount type for easy PCB integration.
  • Operating temperature range up to 150°C ensures stable operation in various conditions.
  • Minimum DC current gain (hFE) is 70, enabling efficient current amplification.
  • Maximum transition frequency is 1 MHz, ideal for low frequency analog circuits.
  • Compact dimensions include a height of 21.77 mm, width 4.19 mm, and length 5.2 mm fitting space-constrained applications.
  • Transistor polarity is PNP with maximum emitter base and collector base voltages of -5 V and -50 V respectively.

Product Description

onsemi KSA1015YTA is a small signal PNP bipolar junction transistor housed in a TO-92 package. It supports a maximum DC collector current of -150 mA and a maximum collector-emitter voltage of -50 V, making it suitable for low power switching and amplification in electronic circuits.

This transistor is designed with a three-pin through-hole mounting type, facilitating easy insertion into printed circuit boards for reliable connections. Its configuration is a single transistor with a PNP polarity, widely used in analog and switching applications.

The device offers a maximum power dissipation of 400 mW and can operate at temperatures up to 150°C, ensuring durability and stability under varied working conditions. It has a minimum DC current gain (hFE) of 70, allowing sound amplification performance and a maximum transition frequency of 1 MHz, making it apt for low frequency electronic designs.

Physical dimensions of the KSA1015YTA transistor are compact, with height 21.77 mm, width 4.19 mm, and length 5.2 mm, fitting well in space-constrained electronic assemblies.

This transistor does not carry specific automotive certifications or approvals, making it suitable primarily for general purpose electronics, industrial, laboratory, and educational uses. It is ideal for incorporation in switching circuits, amplification stages, and small signal processing units.

This transistor features a maximum collector current of -150 mA and collector-emitter voltage of -50 V. It offers a power dissipation rating of 400 mW suitable for low power applications. The TO-92 package and through-hole mounting enhance ease of integration.

Compact size with dimensions 21.77 mm by 4.19 mm by 5.2 mm. Robust operation up to 150°C maximum temperature. Minimum DC current gain of 70 for efficient amplification. Maximum transition frequency of 1 MHz supporting low frequency signals.

PNP configuration and 3-pin layout for universal compatibility. Explore onsemi Bipolar Transistors and other semiconductor devices at EnvMart for industrial, electronics manufacturing, and laboratory applications.

onsemi Small Signal PNP Transistor TO-92 Package, Maximum DC Collector Current -150 mA, Collector Emitter Voltage KSA1015YTA
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Frequently Asked Questions

The maximum DC collector current for this transistor is -150 mA.

The maximum collector-emitter voltage for the KSA1015YTA is -50 V.

This model has a maximum power dissipation rating of 400 mW.

The transistor can operate at temperatures up to 150°C.

It features a pin count of 3, suitable for through-hole mounting.

The dimensions are 21.77 mm in height, 4.19 mm in width, and 5.2 mm in length.

The minimum DC current gain (hFE) for the KSA1015YTA is 70.

The maximum transition frequency is 1 MHz, making it suitable for low frequency applications.

This transistor uses a through-hole mounting type for easy PCB integration.

The configuration of this model is a single PNP transistor.

It is suitable for low power switching and amplification in electronic circuits.

The maximum emitter base voltage (VEBO) is -5 V.

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