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onsemi Small Signal PNP Transistor TO-92 Package -800 mA, -60 V, 3-Pin PN2907ATFR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model PN2907ATFR
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 75
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a through-hole mount type with a 3-pin TO-92 package.
  • It supports a maximum power dissipation of 625 mW, suitable for low power applications.
  • The transistor configuration is single with a PNP polarity.
  • It has a minimum DC current gain (hFE) of 75 and maximum transition frequency of 100 MHz.
  • Operating temperature ranges from -55°C to 150°C, making it suitable for harsh industrial environments.
  • Compact dimensions with a height of 20.95 mm, length of 5.2 mm, and width of 4.19 mm.
  • Designed for reliability and high thermal performance in small signal switching and amplification applications.

Product Description

The onsemi PN2907ATFR is a small signal PNP bipolar junction transistor housed in a compact TO-92 3-pin package. It offers a maximum collector current of -800 mA and a collector-emitter voltage rating of -60 V, making it ideal for a variety of low-power amplification and switching duties in industrial electronics.

This transistor features a through-hole mount type ensuring easy integration into PCB designs. It dissipates a maximum power of 625 mW, enabling stable operation within thermal limits for extended service life.

With a minimum DC current gain (hFE) of 75 and a transition frequency of 100 MHz, the PN2907ATFR provides efficient signal processing capabilities at high frequencies. It operates reliably across a wide temperature range from -55°C to 150°C, which is critical for automotive, industrial, and commercial electronics applications.

The physical dimensions of 20.95 mm height, 5.2 mm length, and 4.19 mm width allow for compact circuit layouts. This transistor does not carry any specific standards or automotive approvals but is designed for robust performance.

This PNP small signal transistor is suitable for amplification and switching in power supplies, signal modulation, and general-purpose electronic circuits. The TO-92 packaged transistor supports through-hole mounting commonly used in assembly and prototyping.

Its broad operating temperature range ensures reliable functioning in both laboratory and harsh industrial environments. Compact size makes it a versatile component for embedded and standalone electronic solutions. High transition frequency allows for use in RF and high-speed switching circuits.

Applications include industrial controls, consumer electronics, instrumentation, and automotive electronic circuits. Its design supports efficient signal amplification with minimal noise and thermal effects.

Choose the onsemi PN2907ATFR transistor for dependable, high-performance small signal switching and amplification in electronic projects and manufacturing. Browse the Electronics & Electricals, Semiconductor category on EnvMart for a complete range of Bipolar Transistors, components, and industrial-grade electrical parts.

onsemi Small Signal PNP Transistor TO-92 Package -800 mA, -60 V, 3-Pin PN2907ATFR
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Frequently Asked Questions

The maximum collector current for this model is -800 mA.

It has a maximum power dissipation rating of 625 mW.

This transistor operates within a temperature range of -55°C to 150°C.

The maximum transition frequency is 100 MHz.

The dimensions are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

It is housed in a TO-92 package, which is a through-hole mount type.

The minimum DC current gain (hFE) is 75.

The maximum collector-emitter voltage rating is -60 V.

It is suitable for low-power amplification and switching duties in industrial electronics, including power supplies and signal modulation.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor has a 3-pin configuration.

The transistor configuration is PNP polarity.

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