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onsemi Small Signal PNP Bipolar Transistor, 100 mA, 45 V, TO-92 Package BC557BTF

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 18.03mm
Length 5.2mm
Model BC557BTF
Width 4.19mm
Mount Type Through Hole
Series BC557B
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 110
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Silicon Transistor
Maximum Transition Frequency ft 10MHz

Key Features

  • This transistor features silicon configuration suitable for general-purpose switching and amplification.
  • It has a maximum power dissipation of 500 mW ensuring reliable operation in low power applications.
  • The device operates within a temperature range of -55°C to 150°C for wide environmental applicability.
  • With a minimum DC current gain (hFE) of 110, the BC557BTF delivers good current amplification efficiency.
  • The package type TO-92 supports through-hole mounting for ease of PCB integration.
  • Maximum transition frequency is 10 MHz, suitable for low frequency applications.
  • The transistor polarity is PNP, commonly used in signal amplifier circuits.
  • Pin count is 3, standard for bipolar junction transistors enabling easy circuit design.

Product Description

onsemi BC557BTF is a high-quality small signal PNP bipolar junction transistor featuring a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V. Packaged in a compact TO-92 through-hole format, this transistor offers reliable performance for general-purpose amplification and switching tasks in electronic circuits.

The silicon transistor configuration provides robust operation with a power dissipation limit of 500 mW, making it suitable for low power applications in consumer electronics, industrial control systems, and instrumentation. Its transistor polarity is PNP, designed to complement NPN devices in circuit designs.

Capable of operating in extreme temperature conditions from -55°C minimum up to 150°C maximum, the BC557BTF is adaptable for use in harsh environments while maintaining dependable functionality.

With a minimum DC current gain (hFE) of 110, this device offers good amplification performance, supporting efficient signal processing in analog and switching circuits. The maximum transition frequency of 10 MHz supports applications in audio frequency ranges and low-frequency switching.

The TO-92 package style enables through-hole mounting, facilitating easy assembly and replacement on printed circuit boards (PCB). The transistor has three pins, standard for bipolar junction transistors, simplifying circuit integration and compatibility.

This transistor series is a reliable choice for hobbyists and professionals alike, well-suited for electronic, laboratory, industrial, and educational projects involving signal amplification and power switching.

Explore EnvMart’s comprehensive selection of Bipolar Transistors for various semiconductor needs to find the perfect component for your application. This transistor features silicon configuration suitable for general-purpose switching and amplification.

It has a maximum power dissipation of 500 mW ensuring reliable operation in low power applications. The device operates within a temperature range of -55°C to 150°C for wide environmental applicability. With a minimum DC current gain (hFE) of 110, the BC557BTF delivers good current amplification efficiency.

The package type TO-92 supports through-hole mounting for ease of PCB integration. Maximum transition frequency is 10 MHz, suitable for low frequency applications. The transistor polarity is PNP, commonly used in signal amplifier circuits.

Pin count is 3, standard for bipolar junction transistors enabling easy circuit design.

onsemi Small Signal PNP Bipolar Transistor, 100 mA, 45 V, TO-92 Package BC557BTF
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

The collector-emitter voltage rating is 45 V.

It has a maximum power dissipation of 500 mW, suitable for low power applications.

This transistor operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 110, providing good current amplification efficiency.

It is packaged in a TO-92 format, which supports through-hole mounting.

This model has a pin count of 3, standard for bipolar junction transistors.

The maximum transition frequency is 10 MHz, suitable for low frequency applications.

It features a silicon transistor configuration, suitable for general-purpose switching and amplification.

The maximum emitter-base voltage (VEBO) is -5 V.

The country of origin for this transistor is India.

This transistor is suitable for general-purpose amplification and switching tasks in electronic circuits, including consumer electronics and industrial control systems.

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