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onsemi Small Signal NPN Transistor 800 mA 50 V 3-Pin TO-92 BC33725TAR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model BC33725TAR
Width 4.19mm
Mount Type Through Hole
Series BC337
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 10V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • This transistor features a maximum power dissipation of 625 mW.
  • The minimum DC current gain (hFE) is 60 ensuring reliable amplification.
  • The component supports a maximum transition frequency of 50 MHz for fast switching applications.
  • It operates within a temperature range of 0°C to 150°C suitable for varied environments.
  • Designed for through-hole mounting ensuring compatibility with standard PCB assembly.
  • Compact dimensions of 21.77 mm height, 5.2 mm length, and 4.19 mm width enable space-saving design.
  • Ideal for general-purpose amplification and switching in electronic circuits.
  • Complies with no specific standards or automotive certifications.

Product Description

onsemi BC33725TAR is a small signal NPN bipolar junction transistor (BJT) designed for electronic and electrical applications requiring reliable switching and amplification. This transistor has a collector current capacity of 800 mA and a collector-emitter voltage rating of 50 V, making it suitable for low to medium power circuits.

Featuring a 3-pin TO-92 plastic package, it is compatible with through-hole PCB mounting techniques widely used in prototyping and industrial electronics manufacturing. The transistor boasts a minimum current gain (hFE) of 60, enabling efficient signal amplification in various analog circuits.

Operating temperature range from 0°C up to 150°C allows use in environments with moderate thermal stress. It has a maximum power dissipation rating of 625 mW ensuring durability in typical operational scenarios. The device supports switching frequencies up to 50 MHz, facilitating use in high-speed switching and amplification tasks.

Physical dimensions are compact, with a height of 21.77 mm, length of 5.2 mm, and width of 4.19 mm, enabling integration into space-constrained designs.

This transistor finds applications in industrial electronics, power management, signal processing, and general-purpose electronic circuits. It is commonly used in switching regulators, amplifiers, and signal interface circuits within electronic devices and instrumentation.

Maximum DC Collector Current of 800 mA. Maximum Collector-Emitter Voltage of 50 V. Package type: TO-92 with 3 pins for through-hole mount. Minimum DC Current Gain of 60. Maximum Power Dissipation of 625 mW. Maximum Transition Frequency of 50 MHz.

Operating temperature range: 0°C to 150°C. Dimensions: Height 21.77 mm, Length 5.2 mm, Width 4.19 mm. Explore the complete range of Bipolar Transistors at EnvMart for precise and dependable components meeting diverse circuit requirements.

onsemi Small Signal NPN Transistor 800 mA 50 V 3-Pin TO-92 BC33725TAR
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Frequently Asked Questions

The maximum DC collector current for the BC33725TAR is 800 mA.

This transistor has a maximum collector-emitter voltage rating of 50 V.

It operates within a temperature range of 0°C to 150°C.

The maximum power dissipation for the BC33725TAR is 625 mW.

The minimum DC current gain (hFE) for this model is 60.

It supports a maximum transition frequency of 50 MHz, suitable for fast switching applications.

The BC33725TAR is designed for through-hole mounting, compatible with standard PCB assembly.

The dimensions are 21.77 mm in height, 5.2 mm in length, and 4.19 mm in width.

This model comes in a TO-92 plastic package with 3 pins.

It is suitable for general-purpose amplification and switching in electronic circuits, including applications in industrial electronics and power management.

The maximum emitter-base voltage (VEBO) for the BC33725TAR is 5 V.

The maximum collector-base voltage (VCBO) is 10 V.

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