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onsemi Small Signal NPN Transistor 800 mA 50 V TO-92 3-Pin BC33725TFR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model BC33725TFR
Width 4.19mm
Mount Type Through Hole
Series BC337
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 10V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
onsemi BC33725TA NPN Transistor, 800 mA, 45 V, 3-Pin TO-92Brand onsemi

Key Features

  • This transistor supports a maximum DC collector current of 800 mA.
  • The maximum collector-emitter voltage rating is 50 volts.
  • Designed in a compact TO-92 3-pin package for easy through-hole PCB assembly.
  • Features a minimum DC current gain (hFE) of 60 for efficient amplification.
  • Operates reliably in temperature ranges from -55°C to 150°C.
  • Maximum power dissipation of 625 mW ensures stable performance under load.
  • This single transistor device has a maximum transition frequency of 50 MHz.
  • Pin configuration supports standard 3-pin bipolar junction transistor layout.

Product Description

The onsemi BC33725TFR is a high-performance small signal NPN bipolar junction transistor designed for versatile electronic and industrial applications. It supports a maximum DC collector current of 800 mA and can handle collector-emitter voltages up to 50 V, making it suitable for switching and amplification roles in various circuits.

Housed in a compact TO-92 package with three pins, this transistor is intended for through-hole mounting, ensuring ease of installation on printed circuit boards. Its single transistor configuration and NPN polarity provide reliable operation in a wide range of electronic devices.

The BC33725TFR features a minimum DC current gain (hFE) of 60, supporting efficient signal amplification, and has a maximum power dissipation rated at 625 mW for dependable thermal management. It performs well across a broad temperature range from -55°C to 150°C, making it applicable in challenging environmental conditions.

With a maximum transition frequency of 50 MHz, it accommodates many frequency requirements in analog and digital circuits. The pin count of 3 conforms to standard transistor pinouts, facilitating straightforward integration into design layouts.

This transistor supports a maximum DC collector current of 800 mA. The maximum collector-emitter voltage rating is 50 volts. Designed in a compact TO-92 3-pin package for easy through-hole PCB assembly. Features a minimum DC current gain (hFE) of 60 for efficient amplification.

Operates reliably in temperature ranges from -55°C to 150°C. Maximum power dissipation of 625 mW ensures stable performance under load. This single transistor device has a maximum transition frequency of 50 MHz. Pin configuration supports standard 3-pin bipolar junction transistor layout.

NPN transistor polarity suitable for various switching and amplification applications. Compact size with dimensions of height 20.95 mm, length 5.2 mm, width 4.19 mm.

This transistor is ideal for industrial, consumer electronics, automotive, and general-purpose electronic circuit designs requiring reliable signal switching and amplification components. Its robust specifications make it a go-to component for prototype development and mass manufacturing applications.

Explore our Electronics & Electricals category for more onsemiconductor components and related Bipolar Transistors to find the best match for your design needs.

onsemi Small Signal NPN Transistor 800 mA 50 V TO-92 3-Pin BC33725TFR
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Frequently Asked Questions

The maximum DC collector current for the BC33725TFR is 800 mA.

This model has a maximum collector-emitter voltage rating of 50 V.

The minimum DC current gain (hFE) for the BC33725TFR is 60, which supports efficient amplification.

The maximum power dissipation for this transistor is rated at 625 mW.

It operates reliably in temperature ranges from -55°C to 150°C.

The maximum transition frequency for the BC33725TFR is 50 MHz.

This model is housed in a compact TO-92 package designed for through-hole mounting.

The dimensions of this transistor are height 20.95 mm, length 5.2 mm, and width 4.19 mm.

The BC33725TFR features a standard 3-pin configuration suitable for bipolar junction transistors.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V.

This transistor is suitable for various switching and amplification applications in industrial, consumer electronics, and automotive circuits.

The BC33725TFR is an NPN bipolar junction transistor.

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