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onsemi Small Signal NPN Transistor BC33716TA, 800mA Collector Current, 50V Collector-Emitter Voltage, 3-Pin TO-92 BC33716TA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model BC33716TA
Width 4.19mm
Mount Type Through Hole
Series BC337
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 10V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • Supports a maximum DC collector current of 800mA for robust device performance.
  • Maximum collector-emitter voltage rating of 50V suits moderate voltage applications.
  • Packaged in a compact 3-pin TO-92 package with through-hole mounting.
  • Operates reliably from -55°C to 150°C temperature range for varied environments.
  • Provides a minimum DC current gain (hFE) of 60 for efficient signal amplification.
  • Maximum power dissipation of 625mW allows safe energy handling within device limits.
  • Designed with NPN polarity for standard bipolar transistor circuits.
  • Maximum transition frequency of 50MHz enables moderate frequency operation.

Product Description

onsemi BC33716TA is a small signal NPN bipolar junction transistor featuring a maximum DC collector current of 800mA and a collector-emitter voltage of 50V. It comes in a TO-92 three-pin package suited for through-hole mounting on printed circuit boards.

This transistor exhibits reliable operation over a wide temperature range from -55°C to 150°C, making it suitable for various industrial, laboratory, and commercial electronic applications.

The device provides a minimum DC current gain of 60 which is appropriate for amplification tasks in electronic designs requiring moderate power levels. With a maximum power dissipation of 625mW and a transition frequency of 50MHz, it supports a balance of power handling and signal frequency needs.

Engineered by onsemi, the BC33716TA transistor offers dependable performance in switching and amplification for discrete semiconductor projects and repairs. Its NPN transistor polarity aligns with standard bipolar transistor configuration requirements.

Supports maximum collector current of 800mA. Maximum collector-emitter voltage of 50V for moderate voltage circuitry. Compact TO-92 3-pin package facilitates easy PCB integration. Broad operating temperature range from -55°C to 150°C ensures durability.

Minimum current gain (hFE) of 60 for efficient amplification.

This transistor finds broad implementation across industrial automation controls, electronic instrumentation, and other electronic component assembly environments. It is a critical component in designing and repairing analog and digital circuits requiring robust switching elements.

Explore a variety of bipolar transistors including this model and others systematically arranged on EnvMart's Electronics & Electricals > Semiconductor > Bipolar Transistors category to find the right fit for your technical requirements.

onsemi Small Signal NPN Transistor BC33716TA, 800mA Collector Current, 50V Collector-Emitter Voltage, 3-Pin TO-92 BC33716TA
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Frequently Asked Questions

The maximum DC collector current for this model is 800mA.

It has a maximum collector-emitter voltage rating of 50V, suitable for moderate voltage applications.

This transistor is packaged in a compact 3-pin TO-92 package, designed for through-hole mounting.

The BC33716TA operates reliably over a temperature range from -55°C to 150°C.

It provides a minimum DC current gain (hFE) of 60, which is efficient for amplification tasks.

The maximum power dissipation for the BC33716TA is 625mW, allowing safe energy handling within device limits.

This model has a maximum transition frequency of 50MHz, enabling moderate frequency operation.

It is designed with NPN polarity, suitable for standard bipolar transistor circuits.

The dimensions are 21.77mm in height, 5.2mm in length, and 4.19mm in width.

The maximum emitter-base voltage (VEBO) for the BC33716TA is 5V.

It is suitable for various industrial, laboratory, and commercial electronic applications, particularly in switching and amplification tasks.

The country of origin for this transistor is India.

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