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Toshiba Power Switch IC 18-Pin SSOP, 17V Max Supply Voltage, 500mA Operating Current TBD62083AFNG(Z,EL)
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Model | TBD62083AFNG(Z,EL) |
| Series | TBD6208 |
| Maximum Operating Temperature | 85°C |
| Package Type | SSOP18 |
| Minimum Operating Temperature | -40°C |
| Operating Current | 500mA |
| Pin Count | 18 |
| Maximum Supply Voltage | 17V |
| Switch On Resistance RdsOn | 3.25Ω |
Key Features
- Features 8 DMOS transistor arrays with built-in clamp diodes for inductive load switching.
- Switch On Resistance (RdsOn) is low at 3.25 ohms for efficient power management.
- Compatible with SSOP18 package and 18-pin configuration.
- Designed for robust operation from -40°C to 85°C temperature range.
- Supports high voltage and high current switching applications reliably.
- Suitable for electronic components and power management semiconductor uses.
- Non-automotive grade device without specific certifications or automotive standards.
Product Description
The Toshiba TBD62083AFNG(Z,EL) is a Power Switch IC in an 18-pin SSOP package designed for efficient power management across electronic applications requiring high voltage switching and robust operation.
This IC integrates 8 DMOS transistor arrays, each equipped with clamp diodes that facilitate the switching of inductive loads safely, minimizing voltage spikes and improving longevity.
Operating reliably up to a maximum supply voltage of 17V and handling currents up to 500mA, the device maintains a low Switch On Resistance (RdsOn) of 3.25 ohms, enhancing energy efficiency in switching circuits.
The device operates comfortably in industrial temperature ranges from -40°C to 85°C, making it suitable for demanding environments in industrial electronics, power management systems, and various semiconductor electronic components.
Although it is not specified to meet automotive standards or additional certifications, it provides a high current switching capacity essential for effective power control in electronic devices.
Features 8 DMOS transistor arrays with clamp diodes for inductive loads. 18-pin SSOP package for compact circuit integration. Low On Resistance of 3.25Ω for improved efficiency. Maximum supply voltage rating of 17V for high power circuits.
Operating temperature range from -40°C to 85°C for reliable performance. Designed for power management and switching applications in electronics. Lacks certifications but provides robust switching capabilities. This product is ideal for industrial, electronic component manufacturing, power management IC assemblies, and general semiconductor power switching applications.
Explore the Electronics & Electricals category at EnvMart for a broad range of power management solutions including this Toshiba Power Switch IC model TBD62083AFNG(Z,EL).
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Frequently Asked Questions
The maximum supply voltage for this model is 17V, allowing it to handle high power circuits effectively.
This power switch IC can handle an operating current of up to 500mA, making it suitable for various electronic applications.
It operates reliably within a temperature range of -40°C to 85°C, suitable for demanding industrial environments.
This power switch IC features an 18-pin configuration, designed for compact circuit integration.
The Switch On Resistance (RdsOn) is low at 3.25 ohms, which enhances energy efficiency in switching applications.
It comes in an SSOP18 package type, which is suitable for compact circuit designs.
It is designed to switch inductive loads safely, thanks to its integrated clamp diodes that minimize voltage spikes.
No, this model is not specified to meet automotive standards or certifications.
This model belongs to the TBD6208 series, which includes various power management solutions.
The country of origin for this product is India.
It is designed for power management and switching applications in electronics, particularly in industrial and semiconductor contexts.
The integrated clamp diodes help minimize voltage spikes during switching, which can enhance the longevity of the device.
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