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onsemi Small Signal PNP Transistor 3-Pin SOT-23, -100 mA Collector Current, -100 V Voltage, 225 mW Power BSS63LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BSS63LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 95MHz

Key Features

  • The transistor comes in a compact 3-pin SOT-23 package suitable for space-saving designs.
  • Rated for a maximum power dissipation of 225 mW enabling reliable performance in low-power circuits.
  • Minimum DC current gain (hFE) of 30 ensures efficient signal amplification.
  • Operational temperature range from -55°C to 150°C for use in varied industrial environments.
  • High transition frequency of 95 MHz suitable for high-speed applications.
  • The device is automotive qualified to the AEC-Q101 standard, ensuring quality and reliability.
  • Single transistor configuration optimized for discrete semiconductor use cases.

Product Description

onsemi BSS63LT1G is a small signal PNP bipolar transistor designed for surface mounted electronic applications. It features a 3-pin SOT-23 package that provides a compact footprint for modern circuit assemblies requiring efficient signal switching or amplification.

This transistor supports a maximum DC collector current of -100 mA and offers a maximum collector-emitter voltage of -100 V, making it suitable for a broad range of low power and medium voltage electronic designs. The device's power dissipation capacity of 225 mW ensures operational stability under typical load conditions.

The BSS63LT1G transistor exhibits minimum DC current gain (hFE) of 30, delivering reliable amplification characteristics. Its operational temperature range from -55°C to 150°C allows use in diverse environments including industrial, automotive, and consumer electronics sectors.

The maximum transition frequency of 95 MHz makes it an excellent choice for moderately high-frequency switching circuits. Additionally, this transistor is automotive grade, qualified under AEC-Q101 standards, enhancing its suitability for automotive electronics where reliability is critical.

Dimensionally, it is compact with a length of 3.04 mm, width of 1.4 mm, and height of 1.11 mm. The single transistor configuration simplifies implementation in various discrete semiconductor applications such as signal processing, switching regulators, and driver circuits.

The transistor comes in a compact 3-pin SOT-23 package suitable for space-saving designs. Rated for a maximum power dissipation of 225 mW enabling reliable performance in low-power circuits. Minimum DC current gain (hFE) of 30 ensures efficient signal amplification.

Operational temperature range from -55°C to 150°C for use in varied industrial environments. High transition frequency of 95 MHz suitable for high-speed applications. The device is automotive qualified to the AEC-Q101 standard, ensuring quality and reliability.

Small form factor dimensions: length 3.04 mm, width 1.4 mm, and height 1.11 mm. Single transistor configuration optimized for discrete semiconductor use cases.

This transistor is widely used in industrial electronics, automotive control systems, and general-purpose electronic applications requiring robust electrical performance and reliable operation over a wide temperature range. Its standard SOT-23 package enables easy PCB assembly processes, making it ideal for mass production and automated manufacturing environments.

Explore additional onsemi electronic components in the Bipolar Transistors category at EnvMart to discover compatible and complementary devices for your design projects.

onsemi Small Signal PNP Transistor 3-Pin SOT-23, -100 mA Collector Current, -100 V Voltage, 225 mW Power BSS63LT1G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is -100 V.

This transistor has a maximum power dissipation capacity of 225 mW.

The operational temperature range for this transistor is from -55°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 30, ensuring efficient signal amplification.

This model has dimensions of 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

It comes in a compact 3-pin SOT-23 package, suitable for surface mount applications.

The maximum transition frequency for this model is 95 MHz, making it suitable for high-speed applications.

Yes, this transistor is automotive qualified to the AEC-Q101 standard, ensuring quality and reliability for automotive applications.

The maximum DC collector current (Idc) for this transistor is -100 mA.

This model is a PNP type transistor.

The BSS63LT1G is designed for surface mounting.

This transistor is suitable for various applications including signal processing, switching regulators, and driver circuits.

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