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onsemi Small Signal NPN Transistor, 100 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-323 BC848CWT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 2.2mm
Model BC848CWT1G
Width 1.35mm
Mount Type Surface
Series BC848
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports maximum power dissipation of 150 mW for efficient operation.
  • Surface mount design suitable for automated PCB assembly.
  • Minimum DC current gain (hFE) of 110 ensures stable transistor amplification.
  • Operates over a temperature range of -55°C to 150°C for reliability in various conditions.
  • Compliant with automotive standard AEC-Q101 for enhanced quality assurance.
  • High transition frequency of 100 MHz ideal for high-speed switching applications.
  • Single transistor configuration with NPN polarity for common electronic circuit designs.

Product Description

onsemi BC848CWT1G is a small signal NPN transistor designed for electronic and power semiconductor applications. It supports a maximum DC collector current of 100 mA and a collector emitter voltage of 30 V, packaged in a compact 3-pin SOT-323 surface mount format allowing efficient PCB layout and automated manufacturing.

This transistor offers a maximum power dissipation of 150 mW and a minimum DC current gain (hFE) of 110, ensuring strong performance in amplification and switching within electronic circuits. It is suitable for demanding environmental conditions with its operating temperature range from -55°C to 150°C.

The BC848CWT1G complies with the automotive standard AEC-Q101, making it suitable for automotive and industrial applications requiring higher reliability and quality standards. Its high transition frequency of 100 MHz supports high-speed switching tasks typical in communications and control systems.

With compact dimensions of 2.2 mm length, 1.35 mm width, and 0.9 mm height, this device helps minimize space usage without compromising functionality. The transistor’s single, NPN polarity configuration fits a wide range of electronic designs requiring small signal bipolar transistors.

Maximum DC collector current of 100 mA supports moderate load applications. Collector-emitter voltage rating of 30 V ensures voltage tolerance in circuits. Compact SOT-323 surface mount package enhances PCB density. Designed for industrial, automotive, and general electronic use cases.

Automotive grade compliance (AEC-Q101) guarantees durability under harsh conditions.

This product is well-suited for industrial electronics, automotive systems, consumer electronic devices, and telecommunications where reliability, compactness, and efficient switching are critical. onsemi’s BC848CWT1G transistor is an essential component for engineers designing small signal transistor circuits in embedded and discrete semiconductor devices.

Explore more Bipolar Transistors and semiconductor components at EnvMart for your projects and production needs.

onsemi Small Signal NPN Transistor, 100 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-323 BC848CWT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

The collector-emitter voltage rating is 30 V.

It operates over a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 110.

This model supports a maximum power dissipation of 150 mW.

It is packaged in a compact 3-pin SOT-323 surface mount format.

The maximum transition frequency is 100 MHz, suitable for high-speed switching applications.

Yes, it complies with the automotive standard AEC-Q101, ensuring enhanced quality assurance.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 0.9 mm in height.

It features a single transistor configuration with NPN polarity.

The maximum emitter-base voltage (VEBO) is 5 V.

It is suitable for industrial electronics, automotive systems, consumer electronic devices, and telecommunications.

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