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Nexperia N-Channel MOSFET, 91 A, 30 V Enhancement Mode, Surface Mount, 4-Pin SOT-669 PSMN5R0-30YL,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN5R0-30YL,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 91A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 61W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features an N-type channel with enhancement mode operation for efficient switching.
- Surface mount design with 4-pin SOT-669 package for compact integration.
- Maximum continuous drain current of 91 amperes ensures high load capability.
- Low maximum drain source resistance of 5 milliohms reduces power loss.
- Maximum power dissipation rated at 61 watts for reliable thermal performance.
- Operates within a wide temperature range from -55°C to 175°C.
- Typical gate charge of 29 nanocoulombs at Vgs facilitates fast switching.
- Maximum gate-source voltage of ±20 volts secures device protection.
Product Description
The Nexperia PSMN5R0-30YL,115 is a high-current N-Channel MOSFET designed for surface mount applications, ideal for industrial and power electronics projects. Its 4-pin SOT-669 package ensures compact integration on printed circuit boards where space efficiency is crucial.
This MOSFET supports a maximum continuous drain current of 91 A and a drain-source voltage of up to 30 V, making it suitable for robust power switching tasks. The enhancement mode operation provides efficient control with a low on-resistance of 5 milliohms, thereby minimizing power dissipation and heat generation during operation.
Thermal reliability is ensured with a maximum power dissipation of 61 W and operation over a wide temperature range from -55°C to 175°C, which suits demanding environments such as industrial automation and power management systems.
Gate control characteristics include a typical gate charge of 29 nC at the specified gate voltage and a maximum gate-source voltage of ±20 V, enabling fast switching and durability against voltage spikes.
The device's physical dimensions are compact: 5 mm length, 4.1 mm width, and 1.1 mm height. It has no listed automotive certification or other specific standards but adheres to general electronic component quality requirements.
High current capacity up to 91 A for demanding power applications. Low on-resistance of 5 mΩ improves energy efficiency. Wide operating temperature range ensures device stability. Surface mount package facilitates modern PCB layouts.
Robust gate voltage tolerance protects against voltage spikes.
This MOSFET is extensively used in power supplies, DC-DC converters, motor controllers, and other industrial electronics requiring efficient and reliable switching elements. Its compact form factor and thermal capabilities make it suitable for commercial and industrial electronic assemblies.
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Frequently Asked Questions
The maximum continuous drain current of this model is 91 A, making it suitable for high load applications.
This MOSFET can handle a maximum drain-source voltage of 30 V, which is essential for robust power switching tasks.
It comes in a 4-pin SOT-669 surface mount package, allowing for compact integration on printed circuit boards.
The typical gate charge at the specified gate voltage (Vgs) is 29 nC, facilitating fast switching capabilities.
The maximum power dissipation for this unit is rated at 61 W, ensuring reliable thermal performance during operation.
This MOSFET operates within a wide temperature range from -55°C to 175°C, suitable for demanding environments.
The maximum drain-source resistance is 5 mΩ, which reduces power loss and improves energy efficiency during operation.
The dimensions are 5 mm in length, 4.1 mm in width, and 1.1 mm in height, making it compact for various applications.
The maximum gate-source voltage is ±20 V, which provides protection against voltage spikes.
This MOSFET is extensively used in power supplies, DC-DC converters, and motor controllers, requiring efficient switching elements.
It features an N-type channel with enhancement mode operation, which is efficient for switching applications.
The country of origin for this MOSFET is India.
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