Nexperia N-Channel MOSFET 100 A, 30 V, Enhancement Mode, 3-Pin TO-263 PSMN4R3-30BL,118

Nexperia PSMN4R3-30BL,118 N-Channel MOSFET is a high-performance transistor designed for power electronic applications requiring robust current handling and efficient switching capabilities. This device comes in a 3-Pin TO-263 surface mount package primarily targeting industrial and commercial electronic circuits.

With a maximum continuous drain current rating of 100 A and a maximum drain-source voltage of 30 V, it suits applications including motor drives, power supplies, and switching regulators. The enhancement mode channel ensures effective switching with low losses.

The MOSFET features a low maximum on-resistance of 5.8 milliohms, which helps in minimizing conduction losses and improving overall circuit efficiency. Its typical gate charge of 41.5 nC at Vgs guarantees fast switching speeds, crucial for high-frequency operations.

Designed to operate reliably in extreme temperatures ranging from -55°C to 175°C, this device supports demanding environmental conditions often found in industrial, automotive, and power management systems. The compact TO-263 package (Length 10.3 mm, Width 11 mm, Height 4.5 mm) facilitates ease of PCB layout and space-saving designs.

Maximum continuous drain current of 100 A. Maximum drain-source voltage of 30 V. Enhancement mode channel type for efficient switching. Low on-resistance of 5.8 milliohms. Maximum power dissipation of 103 W for thermal robustness.

Typical gate charge of 41.5 nC enables fast switching. Wide operating temperature range from -55°C to 175°C. Surface mount TO-263 package for easy assembly. Compact size dimensions: 10.3 mm length, 11 mm width, 4.5 mm height.

Manufactured in the Philippines with quality assurance.

This MOSFET is ideal for industrial and commercial applications including power management, switching devices, automotive electronics, and manufacturing equipment. Its specifications suit designs requiring durable and efficient power transistors.

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