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Nexperia N-Channel MOSFET 44 A 60 V Enhancement 4-Pin SOT-669 PSMN017-60YS,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN017-60YS,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 25mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Features a 4-pin SOT-669 package suitable for surface mounting.
- Enhancement mode channel type offers efficient switching capabilities.
- Maximum power dissipation rated at 74 W for robust performance.
- Operates reliably within temperature range from -55°C to 175°C.
- Very low maximum drain-source resistance of 25 mΩ ensures minimal conduction losses.
- Typical gate charge of 20 nC optimizes switching speed and efficiency.
- Designed without automotive standards and specific approvals.
- Compact dimensions with length 5 mm, width 4.1 mm, and height 1.1 mm.
Product Description
Nexperia PSMN017-60YS,115 is a surface-mount N-Channel MOSFET transistor designed for power management and electronic circuit switching applications. It supports a maximum drain current (Id) of 44 A and a drain-source voltage (Vds) of 60 V, providing effective high-power switching performance.
The transistor is housed in a 4-pin SOT-669 package that facilitates compact PCB layouts and surface mounting. Its enhancement mode channel offers efficient gate control ensuring optimal power dissipation rated at 74 W. The device operates over a wide temperature range from -55°C to 175°C, suitable for demanding industrial and electronic uses.
The MOSFET features a low maximum drain-source resistance of 25 milliohms, which reduces power losses and improves overall efficiency. With a typical gate charge of 20 nC, this component enables fast switching speeds enhancing circuit responsiveness.
Applications include power supplies, motor control, and switching circuits in consumer electronics, industrial controls, and telecommunications. It does not conform to specific automotive standards or approvals but is well-suited for industrial and electronic components integration.
4-Pin SOT-669 package with compact form factor for surface mount applications. Enhancement mode N-Channel MOSFET for efficient power switching. Maximum drain current of 44 A supports high current loads. Maximum drain-source voltage of 60 V enables moderate voltage applications.
Low resistance of 25 mΩ minimizes conduction losses. Maximum power dissipation of 74 W ensures device robustness. Wide operating temperature range suits various industrial environments. Typical gate charge of 20 nC balances switching performance and efficiency.
Compact size: 5 mm length, 4.1 mm width, and 1.1 mm height.
This Nexperia MOSFET is a reliable choice for power management in electronics, industrial equipment, control systems, and other applications requiring efficient switching and durability. Explore other Nexperia discrete semiconductors and MOSFETs at EnvMart for expanded options.
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Frequently Asked Questions
The maximum continuous drain current (Id) for this model is 44 A.
It can handle a maximum drain-source voltage (Vds) of 60 V.
This MOSFET is housed in a 4-pin SOT-669 package suitable for surface mounting.
The maximum power dissipation for this model is rated at 74 W.
The typical gate charge (Qg) is 20 nC, optimizing switching speed and efficiency.
It operates reliably within a temperature range from -55°C to 175°C.
The maximum drain-source resistance (Rds) is 25 mΩ, which helps minimize conduction losses.
The dimensions are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
It features an enhancement mode N-channel type, which offers efficient switching capabilities.
The maximum gate-source voltage (Vgs) is -20 V to +20 V.
It is suitable for power supplies, motor control, and switching circuits in consumer electronics and industrial controls.
The country of origin for this MOSFET is India.
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