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Taiwan Semiconductor Single Silicon Junction Switching Diode 3 A 800 V 2-Pin DO-214AB (SMC) RS3K V7G

Category Semiconductor Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.62mm
Length 7.11mm
Model RS3K V7G
Width 6.22mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AB (SMC)
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 500ns
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 800V

Key Features

  • Surface mount type diode designed for efficient switching applications.
  • Package type is DO-214AB (SMC) with 2 pins for PCB mounting.
  • Maximum forward voltage is 1.3 V ensuring low conduction losses.
  • Peak reverse recovery time is 500 ns for fast switching performance.
  • Operates in wide temperature range from -55°C to 150°C.
  • Supports a peak non-repetitive forward surge current of 100 A for transient protection.
  • Compact size with dimensions of length 7.11 mm, width 6.22 mm, and height 2.62 mm.
  • Manufactured in China with new product condition.

Product Description

Taiwan Semiconductor RS3K V7G is a single silicon junction switching diode designed for surface mount technology, supporting a maximum forward current of 3 A and peak repetitive reverse voltage of 800 V. It features a DO-214AB (SMC) package suitable for compact PCB applications in electronic and power circuits.

The diode offers a low maximum forward voltage drop of 1.3 V, which helps improve circuit efficiency by minimizing conduction loss. Its fast switching capability is ensured with a peak reverse recovery time of 500 nanoseconds, making it ideal for switching power supplies, rectification and protection applications.

Operating over a wide temperature range from -55°C up to 150°C, the RS3K V7G diode demonstrates robust thermal tolerance suitable for industrial and commercial use. It can withstand peak non-repetitive forward surge currents of up to 100 A to handle transient current events safely.

With a compact footprint of length 7.11 mm, width 6.22 mm, and height 2.62 mm, this 2-pin diode package allows for efficient PCB space usage. Manufactured in China, it complies with standard semiconductor quality expectations though no specific approvals or automotive standards are indicated.

Surface mount single diode for switching and rectification. 3 A forward current rating and 800 V maximum reverse voltage. Fast reverse recovery time of 500 ns. Wide operating temperature range from -55°C to 150°C. Low forward voltage drop of 1.3 V.

Peak surge current rating of 100 A for transient durability. Compact DO-214AB (SMC) package with 2 pins. Suitable for industrial, electronic component assemblies, and power management circuits. Explore more Semiconductor Diodes at EnvMart to find the right components for your electronics projects and industrial applications.

Taiwan Semiconductor Single Silicon Junction Switching Diode 3 A 800 V 2-Pin DO-214AB (SMC) RS3K V7G
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Frequently Asked Questions

The maximum forward current rating of this model is 3 A.

This diode has a peak reverse recovery time of 500 ns, which supports fast switching performance.

The maximum peak reverse repetitive voltage for this diode is 800 V.

The dimensions of the DO-214AB package are 7.11 mm in length, 6.22 mm in width, and 2.62 mm in height.

This model operates over a wide temperature range from -55°C to 150°C.

The maximum forward voltage drop is 1.3 V, which helps reduce conduction losses.

This diode supports surface mount technology, making it suitable for compact PCB applications.

The peak non-repetitive forward surge current rating is 100 A, allowing it to handle transient events.

This model features a single diode configuration.

This diode is manufactured in China.

It is suitable for switching power supplies, rectification, and protection applications in electronic circuits.

The sub-type of this diode is silicon junction, which is designed for efficient switching applications.

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