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| Country of Origin | China |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.5mm |
| Length | 4.6mm |
| Model | ES2JA R3 |
| Width | 2.83mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214AC |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 50A |
| Maximum Forward Voltage Vf | 1.7V |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Taiwan Semiconductor ES2JA R3 is a single silicon junction switching diode designed for surface mount applications. It is rated for a maximum forward current of 2 amperes and a peak repetitive reverse voltage of 600 volts, delivered in a compact DO-214AC package with 2 pins.
This diode features a fast peak reverse recovery time of 35 nanoseconds, making it suitable for high-speed switching applications in industrial electronics, power supplies, and switching circuits.
The device supports a wide operating temperature range from -55°C to 150°C, ensuring stable performance in diverse environments destined for industrial, manufacturing, telecommunications, and automotive electronic systems (non-automotive certified).
With a forward voltage of approximately 1.7 volts, the ES2JA R3 offers efficient conduction with low power loss. It can also handle peak non-repetitive forward surge currents of up to 50 amperes, providing robustness against transient conditions.
The physical dimensions are precisely controlled, measuring 4.6 mm in length, 2.83 mm in width, and 2.5 mm in height, which facilitates accurate PCB layout and efficient space utilization.
This diode is manufactured in China and is ideal for use in various industrial applications including power conversion, electronic component assemblies, and switching diode circuits.
Supports maximum forward current of 2 amperes for reliable operation. Encapsulated in a compact DO-214AC surface mount package suitable for high-density PCB layouts. Maximum peak repetitive reverse voltage of 600 volts ensures robust switching performance.
Peak reverse recovery time of 35 nanoseconds provides fast switching capability. Operating temperature range from -55°C to 150°C suitable for varied industrial environments. Forward voltage drop typically at 1.7 volts to minimize power loss.
Peak non-repetitive forward surge current rating of 50 amperes for transient handling. Precise physical dimensions: length 4.6 mm, width 2.83 mm, and height 2.5 mm for design accuracy. Manufactured in China under stringent quality standards.
This product is part of EnvMart's Semiconductor Switching Diode category, suitable for industrial, laboratory, manufacturing, and power management electronic applications. Explore other components in our extensive semiconductor catalog for best-fit solutions.
Explore more products in our Switching Diodes category.
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