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Taiwan Semiconductor Silicon Junction Switching Diode, Single, 2 A, 600 V, 2-Pin DO-214AC Package ES2JA R3

Category Switching Diodes Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.5mm
Length 4.6mm
Model ES2JA R3
Width 2.83mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AC
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 50A
Maximum Forward Voltage Vf 1.7V
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • Supports maximum forward current of 2 amperes for reliable operation.
  • Encapsulated in a compact DO-214AC surface mount package suitable for high-density PCB layouts.
  • Maximum peak repetitive reverse voltage of 600 volts ensures robust switching performance.
  • Peak reverse recovery time of 35 nanoseconds provides fast switching capability.
  • Operating temperature range from -55°C to 150°C suitable for varied industrial environments.
  • Forward voltage drop typically at 1.7 volts to minimize power loss.
  • Peak non-repetitive forward surge current rating of 50 amperes for transient handling.
  • Manufactured in China under stringent quality standards.

Product Description

Taiwan Semiconductor ES2JA R3 is a single silicon junction switching diode designed for surface mount applications. It is rated for a maximum forward current of 2 amperes and a peak repetitive reverse voltage of 600 volts, delivered in a compact DO-214AC package with 2 pins.

This diode features a fast peak reverse recovery time of 35 nanoseconds, making it suitable for high-speed switching applications in industrial electronics, power supplies, and switching circuits.

The device supports a wide operating temperature range from -55°C to 150°C, ensuring stable performance in diverse environments destined for industrial, manufacturing, telecommunications, and automotive electronic systems (non-automotive certified).

With a forward voltage of approximately 1.7 volts, the ES2JA R3 offers efficient conduction with low power loss. It can also handle peak non-repetitive forward surge currents of up to 50 amperes, providing robustness against transient conditions.

The physical dimensions are precisely controlled, measuring 4.6 mm in length, 2.83 mm in width, and 2.5 mm in height, which facilitates accurate PCB layout and efficient space utilization.

This diode is manufactured in China and is ideal for use in various industrial applications including power conversion, electronic component assemblies, and switching diode circuits.

Supports maximum forward current of 2 amperes for reliable operation. Encapsulated in a compact DO-214AC surface mount package suitable for high-density PCB layouts. Maximum peak repetitive reverse voltage of 600 volts ensures robust switching performance.

Peak reverse recovery time of 35 nanoseconds provides fast switching capability. Operating temperature range from -55°C to 150°C suitable for varied industrial environments. Forward voltage drop typically at 1.7 volts to minimize power loss.

Peak non-repetitive forward surge current rating of 50 amperes for transient handling. Precise physical dimensions: length 4.6 mm, width 2.83 mm, and height 2.5 mm for design accuracy. Manufactured in China under stringent quality standards.

This product is part of EnvMart's Semiconductor Switching Diode category, suitable for industrial, laboratory, manufacturing, and power management electronic applications. Explore other components in our extensive semiconductor catalog for best-fit solutions.

Explore more products in our Switching Diodes category.

Taiwan Semiconductor Silicon Junction Switching Diode, Single, 2 A, 600 V, 2-Pin DO-214AC Package ES2JA R3
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Frequently Asked Questions

The maximum forward current rating of this diode is 2 amperes, ensuring reliable operation in various applications.

This model has a peak repetitive reverse voltage rating of 600 volts, which supports robust switching performance.

The forward voltage drop for this diode is typically 1.7 volts, which helps minimize power loss during operation.

The peak reverse recovery time of this diode is 35 nanoseconds, allowing for fast switching capabilities.

It operates within a temperature range of -55°C to 150°C, making it suitable for diverse industrial environments.

The physical dimensions of this diode are 4.6 mm in length, 2.83 mm in width, and 2.5 mm in height, facilitating accurate PCB layout.

This diode is encapsulated in a compact DO-214AC surface mount package, suitable for high-density PCB layouts.

The peak non-repetitive forward surge current rating for this diode is 50 amperes, providing robustness against transient conditions.

This model features a single diode configuration, designed specifically for surface mount applications.

The ES2JA R3 is suitable for use in power conversion, electronic component assemblies, and switching diode circuits.

This diode is manufactured in China under stringent quality standards.

The brand of this diode is Taiwan Semiconductor, known for its semiconductor products.

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