Taiwan Semiconductor Silicon Junction Switching Diode Single 2 A 2-Pin DO-214AA 600 V ES2J R5

Taiwan Semiconductor ES2J R5 Silicon Junction Switching Diode is a robust discrete semiconductor device designed for industrial and commercial electronics applications. It handles a maximum forward current of 2 A and is packaged in a DO-214AA surface mount to facilitate efficient PCB assembly and reliable performance under harsh electrical conditions.

This diode features a single silicon junction configuration optimized for rectification and switching in power management circuits. With a peak reverse recovery time of just 35 ns, it is well suited for use in high-speed switching applications such as power supplies, inverters, and motor control circuits.

The device supports a peak repetitive reverse voltage of 600 V, enabling its usage in circuits requiring high voltage blocking capability. It can operate over a wide temperature range from -55°C to 150°C, ensuring stability in challenging environments including industrial control, automotive electronics, and consumer devices.

The physical package dimensions are 4.75 mm length, 3.73 mm width, and 2.61 mm height, allowing compact and space-saving designs. The DO-214AA package provides optimal thermal dissipation and mechanical protection.

Additional key features include a maximum forward voltage of 1.7 V which contributes to lower power dissipation, and a high peak non-repetitive surge current rating of 50 A that allows the diode to handle transient surges without damage.

This semiconductor diode is manufactured in China under strict quality controls to ensure consistent reliability and performance standards. It is suitable for use in industrial automation, power conversion, and electronic circuit design projects requiring durable and high-performance switching diodes.

This diode features a single silicon junction configuration. Maximum forward current rating of 2 A ensures reliable rectification. Package type is surface mount DO-214AA with 2 pins. Peak reverse recovery time is 35 nanoseconds for efficient switching.

Rated for a maximum peak reverse repetitive voltage of 600 V. Maximum forward voltage drop of 1.7 V ensures low power loss. Operational temperature ranges from -55°C to 150°C. Peak non-repetitive forward surge current capability up to 50 A.

Compact dimensions of 4.75 mm length, 3.73 mm width, and 2.61 mm height. Manufactured under precision standards with country of origin China. Explore more Semiconductor Diodes and switching components in our Electronics & Electricals category at EnvMart.