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Taiwan Semiconductor Silicon Junction Switching Diode BAV99W RF, 150 mA, 85 V, 200 mW, SC-70, 3-Pin

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Taiwan Semiconductor Silicon Junction Switching Diode BAV99W RF, 150 mA, 85 V, 200 mW, SC-70, 3-Pin

Name: Taiwan Semiconductor Silicon Junction Switching Diode BAV99W RF, 150 mA, 85 V, 200 mW, SC-70, 3-Pin
Brand: Taiwan Semiconductor
SKU: 372444
Price: 0.04 USD
Availability: InStock

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Category Semiconductor Diodes Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	1mm
Length	2.1mm
Model	BAV99W RF
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SC-70
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	200mW
Diode Configuration	Series
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	150mA
Maximum Peak Reverse Repetitive Voltage Vrrm	85V

Key Features

Supports maximum forward current of 150 mA for low power applications.
Maximum power dissipation of 200 mW ensures efficient operation.
Peak reverse voltage rating is 85 V for robust switching performance.
Peak reverse recovery time of 4 ns enables fast switching speeds.
Compact SC-70 package with 3 pins supports surface mount technology.
Operating temperature range from -65°C to 150°C accommodates harsh conditions.
Maximum forward voltage of 1.25 V minimizes power losses.

Product Description

Taiwan Semiconductor BAV99W RF is a silicon junction switching diode designed for small signal applications that require high speed and high reliability. It supports a maximum forward current of 150 mA and can operate at temperatures ranging from -65°C to 150°C, making it suitable for use in industrial, electronic components, power management, and consumer electronics circuits.

The diode features a peak repetitive reverse voltage of 85 V and can dissipate up to 200 mW power, ensuring durability under typical switching loads. Its peak reverse recovery time of 4 nanoseconds enables rapid switching response essential in high-frequency circuits. The maximum forward voltage of 1.25 V helps to minimize power loss during operation.

The device comes in an SC-70 surface mount 3-pin package, measuring 2.1 mm in length, 1.35 mm in width, and 1 mm in height, facilitating compact and efficient PCB layouts. This diode supports fast switching applications in semiconductors, discrete electronic components, and communications modules.

Typical use cases include industrial electronics, power supply switching circuits, signal rectification, and general-purpose electronic device assembly. The diode is RoHS compliant and meets semiconductor quality standards, suitable for integration in manufacturing and repair environments.

Supports maximum forward current of 150 mA for low power applications. Maximum power dissipation of 200 mW ensures efficient operation. Peak reverse voltage rating is 85 V for robust switching performance. Peak reverse recovery time of 4 ns enables fast switching speeds.

Compact SC-70 package with 3 pins supports surface mount technology. Operating temperature range from -65°C to 150°C accommodates harsh conditions. Maximum forward voltage of 1.25 V minimizes power losses. Small dimensions: length 2.1 mm, width 1.35 mm, height 1 mm for space saving designs.

This product is listed under Semiconductor Diodes and is ideal for electronic components manufacturing, repair and design projects requiring compact and reliable switching diodes. Explore more semiconductors and switching diodes in EnvMart to find complementary components.