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STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement 110 W 3-Pin TO-263 STB60NF06LT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB60NF06LT4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -15, +15V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current is 60 A for high current applications.
- Maximum drain source voltage rating is 60 V ensuring reliable operation.
- Low on-resistance of 14 milliohms reduces conduction losses.
- Typical gate charge is 35 nC allowing efficient switching.
- Wide operating temperature range from -65°C to 175°C for demanding environments.
- Maximum power dissipation of 110 W supports high power requirements.
- Protection with automotive standard AEC-Q101 qualification.
- Compact TO-263 3-pin surface mount package for easy PCB integration.
Product Description
STMicroelectronics STB60NF06LT4 is a high-performance STripFET II N-Channel MOSFET designed for power and switching applications in industrial, automotive, and commercial electronic circuits. This device features a maximum continuous drain current rating of 60 A and a maximum drain-source voltage of 60 V, making it suitable for medium power load management.
The MOSFET is housed in a TO-263 3-pin surface mounting package which simplifies assembly on printed circuit boards, optimizing space usage. It provides ultra-low gate charge of 35 nC at Vgs which improves switching efficiency and reduces power loss in high-frequency operations.
Designed with an enhancement mode channel, the device exhibits a low on-resistance of 14 milliohms ensuring minimal conduction loss and improved overall device efficiency. It also supports a maximum power dissipation of 110 W allowing operation under demanding thermal conditions.
The operating temperature range spans from -65°C to 175°C, making this MOSFET reliable in harsh industrial and automotive environments. It conforms to the automotive standard AEC-Q101, certifying its quality for automotive electronics uses.
Maximum continuous drain current of 60 A for robust current handling. 60 V drain-source voltage rating for enhanced reliability. Low Rds(on) of 14 mΩ reduces conduction power loss. Efficient gate charge characteristics of 35 nC for faster switching.
Wide temperature operability from -65°C to 175°C. 110 W maximum power dissipation capacity. Compliant with automotive AEC-Q101 qualification standards. Compact TO-263 3-pin surface mount package for efficient PCB design.
This MOSFET is ideally suited for use in industrial power management, motor control, automotive electronics, and other applications requiring reliable, efficient switching devices. Environmentally, it is compliant with RoHS directives, ensuring safer use in green electronics designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 60 V, ensuring reliable operation in various applications.
The on-resistance of this device is 14 milliohms, which helps reduce conduction losses during operation.
The typical gate charge for this model is 35 nC, which allows for efficient switching.
This MOSFET operates within a wide temperature range from -65°C to 175°C, suitable for demanding environments.
The maximum power dissipation capacity of this model is 110 W, supporting high power requirements.
It is housed in a compact TO-263 3-pin surface mount package, which simplifies PCB integration.
This model complies with the automotive standard AEC-Q101, ensuring its quality for automotive electronics applications.
The dimensions of this model are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
This device features an enhancement mode N-channel, which is designed for efficient switching applications.
The maximum gate-source voltage for this MOSFET is -15 V to +15 V, allowing for a wide range of control voltages.
This MOSFET is ideally suited for industrial power management, motor control, and automotive electronics applications.
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