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onsemi Bipolar NPN Transistor 50 mA Collector Current 15 V Collector Emitter Voltage 3-Pin SOT-23 MMBT918LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model MMBT918LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 15V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 30V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current is 50 mA, suitable for low-power applications.
  • Collector emitter voltage rating up to 15 V enables use in moderate voltage circuits.
  • Surface mount SOT-23 package with 3 pins allows compact PCB layouts.
  • NPN transistor configuration designed for switching and amplification.
  • Maximum power dissipation of 225 mW supports small signal usage.
  • High transition frequency of 100 MHz suitable for RF applications.
  • Operating temperature rating up to 150°C for reliable performance in harsh environments.
  • Minimum DC current gain (hFE) of 20 ensures adequate signal amplification.

Product Description

onsemi MMBT918LT1G is a bipolar NPN transistor housed in a 3-pin SOT-23 surface mount package, designed for use in low power electronic circuits requiring reliable switching and amplification. It offers a maximum DC collector current of 50 mA and a collector emitter voltage rating of 15 V, making it suitable for various industrial, commercial, and consumer electronics applications.

This transistor supports operation up to 150°C, enabling its use in demanding environments and providing enhanced reliability. Its compact SOT-23 package facilitates high-density PCB assembly, while the transistor's characteristics such as a minimum DC current gain of 20 and a transition frequency of 100 MHz make it ideal for RF, small signal, and switching applications.

The maximum power dissipation of 225 mW limits this device to low power designs, but ensures efficient performance within those limits. Dimensions of 3.04 mm in length, 2.64 mm in height, and 1.4 mm in width underline its suitability for compact designs.

This transistor is a crucial component in industrial automation, consumer electronics, communication, and embedded systems, where precise and efficient signal control is necessary. Applications include amplifiers, switches, and low noise RF amplifying circuits.

Maximum DC collector current of 50 mA provides efficient current handling. Rated collector emitter voltage of up to 15 V accommodates typical low voltage circuits. SOT-23 surface mount package supports modern PCB manufacturing techniques.

High transition frequency of 100 MHz ensures applicability in RF designs. Robust operating temperature range up to 150°C suits industrial environments. Minimum DC gain of 20 guarantees reliable amplification performance.

Small form factor allows use in space-constrained devices. Pin count of 3 suited for common transistor circuit designs. Non-automotive standard device with industry-standard specifications. Available at EnvMart, browse our Electronics & Electricals section for more semiconductors and Bipolar Transistors from leading brands like onsemi.

onsemi Bipolar NPN Transistor 50 mA Collector Current 15 V Collector Emitter Voltage 3-Pin SOT-23 MMBT918LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 50 mA, making it suitable for low-power applications.

This transistor has a collector-emitter voltage rating of up to 15 V, allowing its use in moderate voltage circuits.

The maximum transition frequency is 100 MHz, which is suitable for RF applications.

The dimensions of this model are 3.04 mm in length, 2.64 mm in height, and 1.4 mm in width.

The maximum power dissipation is 225 mW, which supports its use in small signal applications.

It can operate at temperatures up to 150°C, making it suitable for harsh environments.

The minimum DC current gain (hFE) is 20, ensuring adequate signal amplification.

This model is housed in a SOT-23 surface mount package, which allows for compact PCB layouts.

The MMBT918LT1G has a pin count of 3, which is suited for common transistor circuit designs.

The maximum emitter-base voltage (VEBO) is 3 V.

This NPN transistor is suitable for various applications including amplifiers, switches, and low noise RF amplifying circuits.

The transistor configuration for this model is single NPN, designed for switching and amplification.

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