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onsemi General Purpose PNP Transistor 800 mA, 40 V DC, 3-Pin SOT-23 MMBT3906LT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.4mm
Length 3.04mm
Model MMBT3906LT3G
Width 2.64mm
Mount Type Surface
Series MMBT3906L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor supports a maximum collector current of 800 mA.
  • It operates at a maximum collector emitter voltage of 40 V DC.
  • The device features a compact 3-pin SOT-23 surface mount package.
  • Maximum power dissipation rated at 225 mW ensuring reliable operation.
  • Configured as a single transistor with PNP polarity.
  • It has a minimum DC current gain (hFE) of 30 for adequate amplification.
  • Designed to function in temperature ranges from -55°C to 150°C.
  • Suitable for general purpose electronic applications requiring efficient switching.

Product Description

onsemi MMBT3906LT3G is a general purpose PNP bipolar transistor optimized for switching and amplification in electronic circuits.

This transistor supports a maximum DC collector current of 800 mA and can withstand a maximum collector emitter voltage of 40 V DC, making it suitable for moderate power applications.

The device package is SOT-23, a small outline transistor with a 3-pin configuration designed for surface mounting, making it ideal for compact circuit layouts. Rated for a maximum power dissipation of 225 mW, this transistor ensures stable operation within typical design margins.

The minimum DC current gain (hFE) of 30 provides reliable amplification characteristics, and the transistor polarity is PNP. This component operates over a wide temperature range from -55°C to 150°C, suitable for various industrial and commercial electronic environments.

Applications include amplification, switching in power supplies, signal processing, and control circuits in consumer electronics, automotive electronics, and industrial equipment. This transistor supports a maximum collector current of 800 mA.

Operates at a maximum voltage rating of 40 V DC collector to emitter. Compact 3-pin SOT-23 package designed for surface mounting. Power dissipation capacity of up to 225 mW. Configured as a single PNP transistor with hFE of at least 30.

Wide operating temperature range from -55°C to 150°C. Designed for general purpose amplification and switching applications. Widely applicable in industrial, automotive, and consumer electronic circuits. Explore more Bipolar Transistors and related semiconductors in our comprehensive Electronics & Electricals category at EnvMart.

onsemi General Purpose PNP Transistor 800 mA, 40 V DC, 3-Pin SOT-23 MMBT3906LT3G
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Frequently Asked Questions

The maximum collector current for this model is 800 mA.

It has a maximum collector-emitter voltage rating of 40 V DC.

The maximum power dissipation capacity is rated at 225 mW.

This model operates within a temperature range of -55°C to 150°C.

It comes in a compact 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) is 30.

This model is configured as a single PNP transistor.

The maximum emitter-base voltage (VEBO) is -5 V.

The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 0.4 mm in height.

The maximum transition frequency (ft) is 100 MHz.

It is suitable for general purpose amplification and switching applications in consumer electronics, automotive electronics, and industrial equipment.

The country of origin for this transistor is India.

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