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STMicroelectronics MDmesh N-Channel MOSFET 2.5 A 1500 V Enhancement 3-Pin H2PAK STH3N150-2

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.8mm
Length 10.4mm
Model STH3N150-2
Width 15.8mm
Mount Type Surface
Series MDmesh
Maximum Operating Temperature 150°C
Package Type H2PAK
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2.5A
Maximum Drain Source Voltage Vds 1500V
Maximum Drain Source Resistance Rds 9Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 140W
Typical Gate Charge Qg @ Vgs 29.3nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.2V

Key Features

  • Enhancement mode device with 3-pin H2PAK package for surface mount applications.
  • Maximum continuous drain current of 2.5 A ensuring reliable operation under load.
  • Low drain-source resistance of 9Ω for efficient switching performance.
  • Maximum power dissipation of 140 W supporting high power density configurations.
  • Typical gate charge of 29.3 nC enhances switching speed and reduces losses.
  • Wide operating temperature range up to 150°C for robust thermal performance.
  • Compact dimensions with length 10.4 mm, width 15.8 mm, and height 4.8 mm for PCB space efficiency.
  • Rated gate-source voltage from -30 V to +30 V compatible with various gate drive circuits.

Product Description

STMicroelectronics STH3N150-2 is a MDmesh series N-Channel MOSFET engineered for industrial and electronic power management applications requiring high voltage endurance and efficient power switching capability. This enhancement mode transistor supports a continuous drain current rating of 2.5 amperes and a maximum drain-source voltage of 1500 volts, making it suited for high voltage DC power circuits and switching power supplies.

Housed in a compact 3-pin H2PAK surface mount package, the device offers a low on-resistance of 9 ohms and a maximum power dissipation rating of 140 watts, allowing for efficient heat management in demanding environments. It carries a typical gate charge of 29.3 nanocoulombs at the standard gate voltage, which ensures fast switching and reduced power losses.

This MOSFET operates reliably within temperatures up to 150°C, providing excellent thermal stability for industrial uses. Its physical dimensions (10.4 mm length, 15.8 mm width, 4.8 mm height) optimize PCB real estate without compromising performance.

Suitable applications include industrial power control, motor drivers, switching regulators, and power converters in sectors such as manufacturing, automation, and electrical equipment design. The device is designed for surface mount technology, simplifying assembly and integration within complex PCB layouts.

Enhancement mode N-channel MOSFET with MDmesh technology for robust performance. Continuous drain current: 2.5 A, drain-source voltage: 1500 V rating. Low on-resistance and high power dissipation capacity of 140 W. Fast switching with typical gate charge of 29.3 nC.

Operates at temperatures up to 150°C for industrial reliability. Compact H2PAK package suitable for space-constrained designs. Applications include power supplies, motor controls, and industrial electronics. Explore further electronic components and semiconductors at EnvMart for advanced power management solutions and design flexibility.

STMicroelectronics MDmesh N-Channel MOSFET 2.5 A 1500 V Enhancement 3-Pin H2PAK STH3N150-2
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.5 A.

The maximum drain-source voltage rating is 1500 V.

The typical gate charge is 29.3 nC at the standard gate voltage.

This unit has dimensions of 10.4 mm in length, 15.8 mm in width, and 4.8 mm in height.

The maximum power dissipation capacity is 140 W.

The low drain-source resistance is 9 Ω.

The maximum operating temperature is 150°C.

It is housed in a 3-pin H2PAK surface mount package.

The rated gate-source voltage ranges from -30 V to +30 V.

This model is suitable for applications such as industrial power control, motor drivers, and switching regulators.

It features an enhancement mode N-channel configuration.

The pin count for this model is 3.

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