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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.8mm |
| Length | 10.4mm |
| Model | STH3N150-2 |
| Width | 15.8mm |
| Mount Type | Surface |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | H2PAK |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 1500V |
| Maximum Drain Source Resistance Rds | 9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 29.3nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
STMicroelectronics STH3N150-2 is a MDmesh series N-Channel MOSFET engineered for industrial and electronic power management applications requiring high voltage endurance and efficient power switching capability. This enhancement mode transistor supports a continuous drain current rating of 2.5 amperes and a maximum drain-source voltage of 1500 volts, making it suited for high voltage DC power circuits and switching power supplies.
Housed in a compact 3-pin H2PAK surface mount package, the device offers a low on-resistance of 9 ohms and a maximum power dissipation rating of 140 watts, allowing for efficient heat management in demanding environments. It carries a typical gate charge of 29.3 nanocoulombs at the standard gate voltage, which ensures fast switching and reduced power losses.
This MOSFET operates reliably within temperatures up to 150°C, providing excellent thermal stability for industrial uses. Its physical dimensions (10.4 mm length, 15.8 mm width, 4.8 mm height) optimize PCB real estate without compromising performance.
Suitable applications include industrial power control, motor drivers, switching regulators, and power converters in sectors such as manufacturing, automation, and electrical equipment design. The device is designed for surface mount technology, simplifying assembly and integration within complex PCB layouts.
Enhancement mode N-channel MOSFET with MDmesh technology for robust performance. Continuous drain current: 2.5 A, drain-source voltage: 1500 V rating. Low on-resistance and high power dissipation capacity of 140 W. Fast switching with typical gate charge of 29.3 nC.
Operates at temperatures up to 150°C for industrial reliability. Compact H2PAK package suitable for space-constrained designs. Applications include power supplies, motor controls, and industrial electronics. Explore further electronic components and semiconductors at EnvMart for advanced power management solutions and design flexibility.
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