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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.8mm |
| Length | 10.4mm |
| Model | STH270N8F7-2 |
| Width | 15.8mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | H2PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 21mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 315W |
| Typical Gate Charge Qg @ Vgs | 193nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
STMicroelectronics STH270N8F7-2 is a high-performance N-Channel MOSFET from the STripFET H7 series designed for power electronics applications. It supports a maximum continuous drain current of 180A and can withstand drain-source voltages up to 80V. The device uses an enhancement channel mode and features a low on-resistance of 21 milliohms, contributing to high efficiency and reduced power loss.
The MOSFET is housed in a compact 3-pin H2PAK surface mount package, facilitating efficient thermal management and easy integration into modern PCB assemblies. With a maximum power dissipation of 315W, it is well suited for industrial, commercial, and power management circuits where high current and voltage handling is critical.
Electrical specifications include a gate-source voltage range of -20V to +20V and a typical gate charge of 193nC, allowing fast switching and controlled drive requirements. The device operates reliably over a wide temperature span from -55°C to 175°C, making it robust for demanding environments.
Physical dimensions of height 4.8mm, width 15.8mm, and length 10.4mm enable compact system design. The forward voltage of 1.2V ensures efficient conduction during operation. Although no specific automotive standards or certifications apply, this MOSFET is ideal for general power conversion, motor drives, and power supply circuits within industrial and electronic applications.
The device features a 3-pin H2PAK surface mount package for efficient heat dissipation. Maximum drain-source resistance is 21 milliohms ensuring low conduction losses. Supports enhancement channel mode with typical gate charge of 193nC at Vgs.
Operates reliably between -55°C and 175°C, suitable for high-power applications. Maximum power dissipation rating is 315W, supporting demanding electrical loads. Gate-source voltage tolerance ranges from -20V to +20V for robust switching.
Compact dimensions with height 4.8mm, width 15.8mm, and length 10.4mm enable space-saving PCB designs. No automotive or special certifications, ensuring general industrial suitability. Forward voltage of 1.2V supports efficient circuit performance.
This STMicroelectronics MOSFET is an essential component for power electronics segments including industrial automation, motor control, power converters, battery management, and other commercial electronics. It offers reliable and efficient switching characteristics critical in modern electronic designs.
Explore more STMicroelectronics components and MOSFETs in the Electronics & Electricals category at EnvMart for your next project or production line upgrade.
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