onsemi Transistor, NPN Bipolar, 1 A Collector Current, 20 V Collector-Emitter Voltage, 4-Pin SOT-223 Package BCP68T1G

onsemi BCP68T1G is a new NPN bipolar transistor designed for general-purpose switching and amplification within electronic circuits. This transistor supports a collector current of up to 1 A and operates at a collector-emitter voltage of 20 V. Packaged in a compact 4-pin SOT-223 surface mount case, it suits space-sensitive electronic assemblies.

With a maximum power dissipation of 1.5 W, the BCP68T1G offers stable performance for a variety of industrial and commercial applications, including power management and signal amplification. The transistor operates reliably over a wide temperature range from -65°C to 150°C, making it adaptable to harsh environmental conditions.

The minimum DC current gain (hFE) of 50 ensures efficient signal amplification, and the maximum transition frequency of 30 MHz makes it suitable for high-frequency switching applications in telecommunications and control systems.

Its voltage ratings include a maximum collector-base voltage of 25 V DC and maximum emitter-base voltage of 5 V, providing comprehensive protection within circuits. The physical dimensions of 6.7 mm length, 7.3 mm width, and 3.7 mm height cater to compact PCB layouts in industrial electronics.

This transistor is ideal for manufacturers and designers in the electronics industry focused on discrete semiconductor components, power transistor applications, and high-frequency switching solutions.

Features a 4-pin SOT-223 surface mount package suitable for compact PCB designs. Maximum power dissipation of 1.5 W ensures reliable operation under moderate load. Operating temperature ranges from -65°C to 150°C for broad industrial applications.

Minimum DC current gain (hFE) of 50 enhances amplifier efficiency. Maximum transition frequency of 30 MHz supports high-frequency switching tasks. Maximum collector-base voltage is rated at 25 V DC for robust performance.

Emitter-base voltage is limited to a maximum of 5 V for device protection. Dimensions: length 6.7 mm, width 7.3 mm, height 3.7 mm ideal for space-constrained assemblies. Suitability includes electronic component manufacturing, industrial automation, and power management circuits.

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