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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | 50A02CH-TL-E |
| Width | 2.8mm |
| Mount Type | Surface |
| Series | 50A02CH |
| Maximum Operating Temperature | 150°C |
| Package Type | CPH |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 700mW |
| Maximum DC Collector Current Idc | -500mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 690MHz |
onsemi 50A02CH-TL-E is a general purpose PNP bipolar transistor designed for electronic and semiconductor applications requiring up to 500 mA collector current and a maximum collector-emitter voltage of 50 V. It is housed in a compact 3-pin CPH surface mount package optimized for space-saving PCB designs.
This transistor provides robust performance with a maximum power dissipation of 700 mW and a moderate DC current gain (hFE) of 200, ensuring efficient signal amplification. The device supports a maximum transition frequency of 690 MHz, suitable for high-frequency switching circuits in communications and consumer electronics.
With package dimensions of 0.9 mm (height), 2.9 mm (length), and 2.8 mm (width), the component fits well into automated SMT assembly processes. It operates reliably up to a maximum junction temperature of 150°C, making it suited for various industrial and commercial electronics applications.
The device's maximum collector base voltage (VCBO) and emitter base voltage (VEBO) ratings are both 50 V and 5 V respectively, ensuring stable operation within typical bipolar transistor limits.
This 3-pin single transistor configuration is ideal for amplification and switching functions within a range of consumer, industrial, and embedded system applications. It is particularly useful in circuit boards requiring reliable PNP switching elements with compact footprints.
This transistor offers a maximum power dissipation of 700 mW for reliable operation. It features a typical DC current gain (hFE) of 200 to enable efficient amplification. The maximum transition frequency is 690 MHz for fast switching applications.
The package dimensions are compact with 0.9 mm height, 2.9 mm length, and 2.8 mm width. Suitable for use in general purpose bipolar transistor functions with single transistor configuration. Operates safely up to a maximum temperature of 150°C.
Designed for surface mount technology (SMT) applications with the CPH package. Manufactured in China with no automotive qualification or certifications.
Explore more from onsemi semiconductor products and Bipolar Transistors suitable for electronic component applications in construction, manufacturing, and hobbyist projects on EnvMart.
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