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onsemi General Purpose PNP Transistor, 500 mA, 50 V, Surface Mount 3-Pin CPH Package 50A02CH-TL-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 0.9mm
Length 2.9mm
Model 50A02CH-TL-E
Width 2.8mm
Mount Type Surface
Series 50A02CH
Maximum Operating Temperature 150°C
Package Type CPH
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 700mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 690MHz

Key Features

  • This transistor offers a maximum power dissipation of 700 mW for reliable operation.
  • It features a typical DC current gain (hFE) of 200 to enable efficient amplification.
  • The maximum transition frequency is 690 MHz for fast switching applications.
  • The package dimensions are compact with 0.9 mm height, 2.9 mm length, and 2.8 mm width.
  • Suitable for use in general purpose bipolar transistor functions with single transistor configuration.
  • Operates safely up to a maximum temperature of 150°C.
  • Designed for surface mount technology (SMT) applications with the CPH package.
  • Manufactured in China with no automotive qualification or certifications.

Product Description

onsemi 50A02CH-TL-E is a general purpose PNP bipolar transistor designed for electronic and semiconductor applications requiring up to 500 mA collector current and a maximum collector-emitter voltage of 50 V. It is housed in a compact 3-pin CPH surface mount package optimized for space-saving PCB designs.

This transistor provides robust performance with a maximum power dissipation of 700 mW and a moderate DC current gain (hFE) of 200, ensuring efficient signal amplification. The device supports a maximum transition frequency of 690 MHz, suitable for high-frequency switching circuits in communications and consumer electronics.

With package dimensions of 0.9 mm (height), 2.9 mm (length), and 2.8 mm (width), the component fits well into automated SMT assembly processes. It operates reliably up to a maximum junction temperature of 150°C, making it suited for various industrial and commercial electronics applications.

The device's maximum collector base voltage (VCBO) and emitter base voltage (VEBO) ratings are both 50 V and 5 V respectively, ensuring stable operation within typical bipolar transistor limits.

This 3-pin single transistor configuration is ideal for amplification and switching functions within a range of consumer, industrial, and embedded system applications. It is particularly useful in circuit boards requiring reliable PNP switching elements with compact footprints.

This transistor offers a maximum power dissipation of 700 mW for reliable operation. It features a typical DC current gain (hFE) of 200 to enable efficient amplification. The maximum transition frequency is 690 MHz for fast switching applications.

The package dimensions are compact with 0.9 mm height, 2.9 mm length, and 2.8 mm width. Suitable for use in general purpose bipolar transistor functions with single transistor configuration. Operates safely up to a maximum temperature of 150°C.

Designed for surface mount technology (SMT) applications with the CPH package. Manufactured in China with no automotive qualification or certifications.

Explore more from onsemi semiconductor products and Bipolar Transistors suitable for electronic component applications in construction, manufacturing, and hobbyist projects on EnvMart.

onsemi General Purpose PNP Transistor, 500 mA, 50 V, Surface Mount 3-Pin CPH Package 50A02CH-TL-E
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is -50 V.

This transistor features a typical DC current gain (hFE) of 200.

The maximum power dissipation for this model is 700 mW.

The package dimensions are 0.9 mm in height, 2.9 mm in length, and 2.8 mm in width.

The maximum transition frequency for this model is 690 MHz, making it suitable for fast switching applications.

This transistor operates safely up to a maximum temperature of 150°C.

It is designed for surface mount technology (SMT) applications.

This model features a 3-pin configuration.

The maximum DC collector current (Idc) is -500 mA.

It is suitable for general purpose bipolar transistor functions, including amplification and switching in various electronic applications.

The maximum emitter-base voltage (VEBO) for this model is -5 V.

This model is manufactured in China.

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