Nexperia N-Channel MOSFET 375 mA 250 V Enhancement Mode 4-Pin SOT-223 BSP126,115

Nexperia BSP126,115 N-Channel MOSFET is a discrete enhancement mode transistor designed for switching and amplification in electronic circuits. It supports a maximum continuous drain current of 375 mA and a high drain-source voltage of 250 V, providing efficient and reliable performance in a compact 4-Pin SOT-223 package.

Ideal for industrial electronics, power management, and discrete semiconductor applications, this MOSFET offers a maximum power dissipation of 1.5 W and a wide operating temperature range from -55°C to 150°C, ensuring durability in harsh environments.

The device features a maximum drain-source resistance of 5 ohms, a gated channel mode enhancement design, and a typical gate charge of 13.5 nC, which allows for low switching losses and effective control in power circuits. It has a forward voltage of 1 V and supports gate-source voltages from -20 to +20 V.

Physical dimensions are compact, with length 6.7 mm, width 3.7 mm, and height 1.7 mm, enabling integration in space-constrained designs with surface mount technology compatibility via its SOT-223 package.

This MOSFET is designed with enhancement channel mode for efficient switching. It supports a maximum drain current of 375 mA and drain-source voltage of 250 V. The package type is SOT-223 enabling surface mount technology.

Maximum power dissipation is 1.5 W for reliable thermal performance. The device operates in a temperature range from -55°C to 150°C. Pin count is 4 with a maximum drain-source resistance of 5 ohms. Typical gate charge is 13.5 nC at Vgs.

Forward voltage is 1 V with maximum gate-source voltage of -20 to +20 V. Compact dimensions of length 6.7 mm, width 3.7 mm, and height 1.7 mm. No automotive standard certifications but industrial and electronic applicable.

This product is suitable for electronic component inventory in manufacturing, electronics repair, laboratory research, and educational use. Its reliable characteristics make it a versatile choice for discrete semiconductor applications where low power and low voltage switching are required.

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