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onsemi Darlington Transistor NPN, 8A, 400V, 100W Power Dissipation, TO-220 Package MJE5742G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.28mm |
| Model | MJE5742G |
| Mount Type | Through Hole |
| Series | MJE5740 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 8V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Cut-off Current | 5mA |
| Maximum Power Dissipation Pd | 100W |
| onsemi MJE5742G 1 Darlington Transistor NPN, 8 A 400 V HFE | 50, 3-Pin TO-220 |
Key Features
- Features a maximum continuous collector current of 8 amperes.
- Maximum collector emitter voltage is rated at 400 volts for high-voltage applications.
- Power dissipation capability up to 100 watts ensures reliability in demanding circuits.
- Equipped with a 3-pin TO-220 package suitable for through-hole mounting.
- Provides a minimum DC current gain (hFE) of 50 for effective amplification.
- Operates within a temperature range from -65°C to 150°C for versatility in various environments.
- NPN transistor polarity with maximum emitter base voltage of 8 volts.
- Maximum collector emitter saturation voltage is 2 volts for improved switching performance.
Product Description
onsemi MJE5742G Darlington Transistor NPN is a high-performance discrete semiconductor designed for power amplification and switching applications. It supports a maximum continuous collector current of 8 amperes and can withstand up to 400 volts collector-emitter voltage, making it suitable for power supplies and industrial electronic circuits.
The transistor comes in a durable TO-220 package with through-hole mount capability, ensuring easy integration into printed circuit boards. Its minimum DC current gain (hFE) of 50 guarantees reliable amplification performance.
This device operates efficiently in harsh environments with a temperature range from -65°C to 150°C, allowing use in industrial, automotive (non-AECQ qualified), and manufacturing environments.
Additional features include a maximum power dissipation of 100 watts and a maximum saturation voltage of 2 volts, optimized for energy-efficient switching and control circuits.
With compact physical dimensions - 15.75 mm height and 10.28 mm length - this transistor is configured as a single-element chip in the MJE5740 series, designed to meet demanding power transistor requirements.
Features a maximum continuous collector current of 8 amperes. Maximum collector emitter voltage is rated at 400 volts for high-voltage applications. Power dissipation capability up to 100 watts ensures reliability in demanding circuits.
Equipped with a 3-pin TO-220 package suitable for through-hole mounting. Provides a minimum DC current gain (hFE) of 50 for effective amplification. Operates within a temperature range from -65°C to 150°C for versatility in various environments.
NPN transistor polarity with maximum emitter base voltage of 8 volts. Maximum collector emitter saturation voltage is 2 volts for improved switching performance. Compact dimensions with height of 15.75 mm and length of 10.28 mm.
Ideal for industrial, electronic, and power management applications requiring robust amplification.
This transistor is excellent for applications in industrial automation, power control systems, electronic circuits in manufacturing and laboratory equipment, and other fields requiring reliable, high-current NPN Darlington transistor performance.
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Frequently Asked Questions
The maximum continuous collector current for this model is 8 amperes.
It has a maximum collector-emitter voltage rating of 400 volts, suitable for high-voltage applications.
This transistor can handle a maximum power dissipation of 100 watts, ensuring reliability in demanding circuits.
The MJE5742G is equipped with a 3-pin TO-220 package suitable for through-hole mounting.
It provides a minimum DC current gain (hFE) of 50, which is effective for amplification.
This model operates efficiently within a temperature range from -65°C to 150°C, making it versatile for various environments.
The maximum emitter-base voltage for the MJE5742G is 8 volts.
The dimensions of this model are 15.75 mm in height and 10.28 mm in length.
The maximum collector-emitter saturation voltage is 2 volts, which improves switching performance.
This transistor is configured as a single-element chip, meaning there is 1 element per chip.
The MJE5742G has an NPN transistor polarity.
This model is suitable for industrial automation, power control systems, and electronic circuits in manufacturing and laboratory equipment.
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