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onsemi Power NPN Transistor 4 A, 100 V, 15 W TO-225 Package MJE243G

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onsemi Power NPN Transistor 4 A, 100 V, 15 W TO-225 Package MJE243G

Name: onsemi Power NPN Transistor 4 A, 100 V, 15 W TO-225 Package MJE243G
Brand: onsemi
SKU: 232069
Price: 0.53 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	27.73mm
Length	7.8mm
Model	MJE243G
Width	3mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-225
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	100V
Minimum DC Current Gain hFE	40
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	7V
Maximum Collector Base Voltage VCBO	100V
Maximum Power Dissipation Pd	15W
Maximum DC Collector Current Idc	4A
Transistor Configuration	Single
Maximum Transition Frequency ft	10MHz

Key Features

Designed for through-hole mounting and single transistor configuration.
Maximum power dissipation of 15 W ensures efficient handling of power loads.
Features a DC current gain of at least 40 for reliable amplification.
Operates within a temperature range from -65°C to 150°C.
Supports collector-base voltage and collector-emitter voltage up to 100 V.
Maximum transition frequency is 10 MHz, suitable for general-purpose applications.
Compact dimensions of 27.73 mm height, 7.8 mm length, and 3 mm width.

Product Description

onsemi MJE243G is a general purpose power NPN bipolar transistor, rated for a collector current of up to 4 A and capable of withstanding collector-emitter voltages up to 100 V. Packaged in a TO-225 3-pin through-hole form factor, this transistor is suited for applications requiring robust power handling with reliable performance.

The transistor offers a maximum power dissipation of 15 watts, enabling it to operate effectively in power amplification circuits and switching applications. It has a minimum DC gain (hFE) of 40, providing ample current gain for various electronic designs.

Operating temperature ranges from -65°C to 150°C, making it suitable for demanding industrial and commercial environments. Its maximum transition frequency of 10 MHz supports moderate-speed switching tasks.

Mechanical dimensions are precisely specified at 27.73 mm in height, 7.8 mm in length, and 3 mm width, which allows for easy integration into printed circuit boards using through-hole mounting techniques.

This transistor finds extensive use in industrial equipment, power supply circuits, automotive electronics, and general electronic component applications where a reliable NPN transistor of this specification is required.

Designed for through-hole mounting and single transistor configuration. Maximum power dissipation of 15 W ensures efficient handling of power loads. Features a DC current gain of at least 40 for reliable amplification. Operates within a temperature range from -65°C to 150°C.

Supports collector-base voltage and collector-emitter voltage up to 100 V. Maximum transition frequency is 10 MHz, suitable for general-purpose applications. Compact dimensions of 27.73 mm height, 7.8 mm length, and 3 mm width.

This product is suitable for industrial, commercial, and automotive applications requiring power NPN transistors with precise electrical and thermal characteristics. Browse more in the Semiconductors > Bipolar Transistors category at EnvMart for related components.