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STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 110 A, 7 mΩ Rds, 150 W TO-220 STP110N10F7

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STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 110 A, 7 mΩ Rds, 150 W TO-220 STP110N10F7

Name: STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 110 A, 7 mΩ Rds, 150 W TO-220 STP110N10F7
Brand: STMicroelectronics
SKU: 235229
Price: 3.31 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	15.75mm
Length	10.4mm
Model	STP110N10F7
Width	4.6mm
Mount Type	Through Hole
Series	STripFET H7
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	110A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150W
Typical Gate Charge Qg @ Vgs	72nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Features ultra-low gate charge enhancing switching efficiency.
Has a low on-resistance of 7 milliohms for efficient power handling.
Maximum power dissipation capability of 150 watts supports high load conditions.
Operates reliably between -55°C and 175°C temperature range.
Typical gate charge is 72 nanocoulombs at standard gate voltage.
Includes a forward voltage drop of 1.2 volts for reliable conduction.
Supports enhancement mode for precise switching control.
Designed for through-hole mounting in industrial and electronic applications.

Product Description

STMicroelectronics STP110N10F7 is a STripFET H7 series N-channel MOSFET designed for high current and voltage applications. It features a maximum continuous drain current of 110 A and a maximum drain-source voltage of 100 V, making it ideal for power switching and amplification tasks in industrial, electronic, and automation systems.

The device utilizes an enhancement channel mode and offers an ultra-low gate charge of 72 nC at a gate-source voltage to facilitate rapid switching with minimal power loss. Its low on-resistance of 7 milliohms ensures efficient conduction and reduced heat generation during operation.

Constructed in a TO-220 3-pin package, the STP110N10F7 facilitates easy mounting through holes in PCBs or heat sinks. It supports a maximum power dissipation of 150 watts, operates within a wide temperature range of -55°C to 175°C, and handles a maximum gate-source voltage ranging between -20 and +20 volts.

Its compact size with dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width makes it suitable for space-constrained electronic assemblies. This MOSFET is ideally suited for applications in industrial automation, power supplies, motor control, and other high-power demanding systems.

Features ultra-low gate charge enhancing switching efficiency. Has a low on-resistance of 7 milliohms for efficient power handling. Maximum power dissipation capability of 150 watts supports high load conditions. Operates reliably between -55°C and 175°C temperature range.

Typical gate charge is 72 nanocoulombs at standard gate voltage. Includes a forward voltage drop of 1.2 volts for reliable conduction. Supports enhancement mode for precise switching control. Designed for through-hole mounting in industrial and electronic applications.

Compact package dimensions with 15.75mm height, 10.4mm length, and 4.6mm width. Explore a wide range of semiconductor and MOSFET products from top brands in the Electronics & Electricals category at EnvMart.