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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 950μm |
| Length | 5.4mm |
| Model | STL60N10F7 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 16.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
STMicroelectronics STL60N10F7 STripFET H7 N-Channel MOSFET is designed for efficient switching and power management in electronic circuits. This 8-pin PowerFLAT package device supports a maximum continuous drain current of 60 amperes and a drain-source voltage of 100 volts, ideal for industrial, automotive, and power electronics applications.
Featuring an enhancement mode channel and a low on-resistance of 16.5 milliohms, it ensures minimal conduction losses and excellent thermal performance with a maximum power dissipation of 5 watts. The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, supporting demanding industrial and automotive environments.
Additional features include a typical gate charge of 25 nanocoulombs and a maximum gate-source voltage of plus or minus 20 volts, providing fast switching and durability. Its compact PowerFLAT package with dimensions of 5.4 mm length, 6.35 mm width, and 950 micrometers height allows efficient PCB space utilization.
High continuous drain current capability of 60 amperes. Drain-source voltage rating of 100 volts for robust performance. Low on-resistance of 16.5 milliohms ensuring efficient conduction. 8-pin PowerFLAT package suitable for surface mounting.
Maximum power dissipation rated at 5 watts. Operating temperature range from -55°C to 175°C. Typical gate charge of 25 nanocoulombs at gate-source voltage. Maximum gate-source voltage of ±20 volts enhancing switching robustness.
Compact dimensions with 5.4 mm length, 6.35 mm width, and 950 µm height. Forward voltage drop of 1.1 volts to reduce power losses.
This MOSFET is widely used in industrial power supplies, motor control circuits, and automotive power electronics where reliable, efficient power switching is critical. STMicroelectronics' STripFET H7 series offers reliable performance for advanced electronic designs.
Explore a broad range of semiconductor solutions from STMicroelectronics and other top manufacturers at EnvMart, ensuring quality and compatibility for your projects.
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