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STMicroelectronics STripFET H7 N-Channel MOSFET 80 A 100 V Enhancement Mode, 3-Pin TO-252 STD100N10F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD100N10F7 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features ultra-low gate charge for efficient switching performance.
- Built with STripFET H7 technology for low on-resistance.
- Enhanced mode transistor suitable for surface mount applications.
- Supports continuous drain current up to 80 A for high power handling.
- Operates at temperatures ranging from -55°C to 175°C.
- Maximum power dissipation of 120 W for reliable operation.
- Compact dimensions with length 6.6 mm, width 6.2 mm, and height 2.4 mm.
- Maximum drain-source resistance of 8 milliohms minimizing conduction losses.
Product Description
STMicroelectronics STD100N10F7 is a high-performance N-Channel MOSFET transistor from the STripFET H7 series designed for efficient power switching with low conduction losses. Featuring a maximum continuous drain current of 80 A and a maximum drain-source voltage of 100 V, this 3-pin TO-252 package device is tailored for surface mount technology applications.
The device incorporates enhancement mode channel characteristics and offers ultra-low gate charge of 61 nC, enabling rapid switching suitable for industrial power management, automotive electronics, and consumer electronic devices. The typical forward voltage of 1.2 V and low on-resistance of 8 mΩ contribute to improved efficiency and thermal performance.
Operating reliably within an ambient temperature range from -55°C to 175°C, and supporting a maximum power dissipation of 120 W, the STD100N10F7 MOSFET ensures durability under demanding conditions. Its compact dimensions facilitate easy PCB integration where space-saving is critical.
Ultra-low gate charge for reduced switching losses. Low on-resistance enhances conduction efficiency. High current capability of 80 A for robust power handling. Wide operating temperature range suitable for automotive and industrial use.
Standard TO-252 package for compatibility with surface mount assembly. Maximum power dissipation of 120 W allows for high load applications. High gate-source voltage tolerance ensures device protection. Compact size supports design miniaturization.
Designed for industrial, automotive, and consumer electronics applications. Reliability in harsh environments with extended temperature operation.
This MOSFET is ideal for use in power converters, motor controls, power supplies, and other electronic circuits requiring efficient high-current switching. STMicroelectronics' STripFET H7 series devices are well-regarded for their balance of performance and thermal management.
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Frequently Asked Questions
The maximum continuous drain current of the STD100N10F7 is 80 A.
This MOSFET can handle a maximum drain-source voltage of 100 V.
It operates reliably within a temperature range of -55°C to 175°C.
The dimensions of the STD100N10F7 are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The typical gate charge for this model is 61 nC.
The maximum power dissipation for the STD100N10F7 is 120 W.
This MOSFET features a maximum drain-source resistance of 8 mΩ.
The STD100N10F7 comes in a TO-252 package type, suitable for surface mount applications.
This MOSFET is designed for use in power converters, motor controls, power supplies, and other electronic circuits requiring efficient high-current switching.
This model is an N-channel enhancement mode MOSFET.
The maximum gate-source voltage for the STD100N10F7 is -20 V to +20 V.
The STD100N10F7 is part of the STripFET H7 series by STMicroelectronics.
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