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STMicroelectronics MDmesh M2 N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247 STW24N60M2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW24N60M2 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- The MOSFET supports a maximum continuous drain current of 18 A.
- It has a maximum drain-source voltage rating of 650 V suitable for power applications.
- Features a 3-pin TO-247 through-hole package ensuring reliable mounting.
- Offers a low typical gate charge of 29 nC for efficient switching.
- Maximum power dissipation capability is 150 W ensuring robust operation.
- Gate-source voltage limits are ±25 V for safe device control.
- Designed to operate over a wide temperature range from -55°C to 150°C.
- The device has a drain-source resistance of 190 mΩ enhancing conduction efficiency.
Product Description
STMicroelectronics STW24N60M2 is an N-channel MDmesh™ M2 Series MOSFET designed for demanding power electronics applications. Rated for 18 A continuous drain current and a high drain-source voltage of 650 V, this enhancement mode transistor is ideal for resonant-type switching supplies such as LLC converters.
The device is housed in a 3-pin TO-247 package for through-hole mounting, facilitating easy integration in industrial and commercial power circuits. Its low gate charge of 29 nC and a maximum power dissipation of 150 W contribute to efficient switching and thermal management.
With operating temperature capabilities ranging from -55°C minimum to 150°C maximum, the STW24N60M2 offers reliable performance under harsh temperature conditions in industrial, laboratory, and manufacturing environments. Its maximum gate-source voltage rating of ±25 V ensures compatibility with typical gate drive circuits without risk of damage.
The MOSFET features a drain-source resistance (Rds) of 190 mΩ, supporting low conduction losses. The forward voltage drop of 1.5 V further enhances efficiency in fast switching applications.
Maximum continuous drain current of 18 A. Drain-source voltage rating of 650 V. 3-pin TO-247 through-hole package for secure mounting. Low typical gate charge of 29 nC at Vgs. High power dissipation rating of 150 W. Wide operating temperature range from -55°C to 150°C.
Maximum gate-source voltage ±25 V. Low on-resistance of 190 mΩ. Forward voltage of 1.5 V suitable for high-speed switching.
This MOSFET is well-suited for industrial, commercial, and electronic power management applications including converters, inverters, and power supplies. Its robust construction and electrical characteristics make it ideal for use in harsh operating environments, involving resonant and high voltage switching.
Explore similar power semiconductors and MOSFET devices within the Electronics & Electricals category at EnvMart for comprehensive solutions to power switching needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It is housed in a 3-pin TO-247 package for through-hole mounting.
The typical gate charge at Vgs is 29 nC, which contributes to efficient switching.
The maximum power dissipation capability of this MOSFET is 150 W.
It operates over a wide temperature range from -55°C to 150°C.
The drain-source resistance (Rds) is 190 mΩ, enhancing conduction efficiency.
The forward voltage drop is 1.5 V, suitable for high-speed switching applications.
The maximum gate-source voltage limits are ±25 V, ensuring safe device control.
It features an N-channel configuration, suitable for enhancement mode applications.
This MOSFET is well-suited for power management applications including converters, inverters, and power supplies.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
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