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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF20N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STF20N65M5 is a high-performance N-Channel MDmesh™ M5 series MOSFET designed for power and control applications requiring up to 18 amps of continuous current and blocking voltages up to 710 volts. Its enhancement mode channel and advanced silicon device architecture deliver low conduction losses and efficient switching capabilities. The device features a 3-pin TO-220 package, commonly used for through-hole mounting, which ensures reliable mechanical stability and effective heat dissipation.
Boasting a maximum power dissipation of 30 watts, the MOSFET is suited for demanding applications in industrial, laboratory, construction, HVAC, manufacturing, and renewable energy sectors. The device's operational temperature ranges from -55°C to 150°C, making it suitable for harsh environments.
Its low forward voltage of 1.5 V combined with a maximum drain-source resistance of 190 milliohms and a low typical gate charge of 36 nanocoulombs allows for highly efficient hard switching in power factor correction (PFC) and pulse width modulation (PWM) circuits. This MOSFET is engineered to optimize energy consumption and improve efficiency in solar power converters, consumer product power supplies, and electronic lighting controls. The typical gate-source voltage tolerance of ±25 V adds robustness to gate driving scenarios.
With compact package dimensions of 10.4 mm length, 4.6 mm width, and 16.4 mm height, this device fits well into dense PCB layouts and power modules. Enhancement mode N-channel MOSFET for efficient switching applications.
Maximum continuous drain current of 18 A ensures high power handling. Voltage rating of 710 V for high-voltage power designs. Low typical gate charge and on-resistance reduce switching losses. Wide operating temperature range from -55°C to 150°C suitable for industrial use.
3-Pin TO-220 package for through-hole mounting and superior thermal management. Compact physical dimensions for efficient PCB integration. Designed and optimized for power factor correction (PFC) and PWM topologies. Applicable in industrial, laboratory, construction, HVAC, manufacturing, and solar energy systems.
Reliable performance in electronic lighting and consumer power supplies. Explore more in our Electronics & Electricals category for advanced discrete semiconductor components and MOSFET solutions at EnvMart.
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