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STMicroelectronics MDmesh M5 N-Channel MOSFET, 18 A, 710 V Enhancement Mode, 3-Pin TO-220 STF20N65M5

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model STF20N65M5
Width 4.6mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 18A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 190mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 30W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • Features an enhancement mode channel type for reliable switching.
  • Packaged in a durable 3-pin TO-220 through-hole mounting format.
  • Low on-resistance of 190 milliohms ensures efficient operation.
  • Maximum power dissipation rated at 30 watts for thermal reliability.
  • Operating temperature range from -55°C up to 150°C suits various industrial environments.
  • Low typical gate charge of 36 nanocoulombs enables fast switching performance.
  • Forward voltage of 1.5 V and gate source voltage tolerance of ±25 V.
  • Compact dimensions with length 10.4 mm, width 4.6 mm, and height 16.4 mm.

Product Description

STMicroelectronics STF20N65M5 is a high-performance N-Channel MDmesh™ M5 series MOSFET designed for power and control applications requiring up to 18 amps of continuous current and blocking voltages up to 710 volts. Its enhancement mode channel and advanced silicon device architecture deliver low conduction losses and efficient switching capabilities. The device features a 3-pin TO-220 package, commonly used for through-hole mounting, which ensures reliable mechanical stability and effective heat dissipation.

Boasting a maximum power dissipation of 30 watts, the MOSFET is suited for demanding applications in industrial, laboratory, construction, HVAC, manufacturing, and renewable energy sectors. The device's operational temperature ranges from -55°C to 150°C, making it suitable for harsh environments.

Its low forward voltage of 1.5 V combined with a maximum drain-source resistance of 190 milliohms and a low typical gate charge of 36 nanocoulombs allows for highly efficient hard switching in power factor correction (PFC) and pulse width modulation (PWM) circuits. This MOSFET is engineered to optimize energy consumption and improve efficiency in solar power converters, consumer product power supplies, and electronic lighting controls. The typical gate-source voltage tolerance of ±25 V adds robustness to gate driving scenarios.

With compact package dimensions of 10.4 mm length, 4.6 mm width, and 16.4 mm height, this device fits well into dense PCB layouts and power modules. Enhancement mode N-channel MOSFET for efficient switching applications.

Maximum continuous drain current of 18 A ensures high power handling. Voltage rating of 710 V for high-voltage power designs. Low typical gate charge and on-resistance reduce switching losses. Wide operating temperature range from -55°C to 150°C suitable for industrial use.

3-Pin TO-220 package for through-hole mounting and superior thermal management. Compact physical dimensions for efficient PCB integration. Designed and optimized for power factor correction (PFC) and PWM topologies. Applicable in industrial, laboratory, construction, HVAC, manufacturing, and solar energy systems.

Reliable performance in electronic lighting and consumer power supplies. Explore more in our Electronics & Electricals category for advanced discrete semiconductor components and MOSFET solutions at EnvMart.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 18 A, 710 V Enhancement Mode, 3-Pin TO-220 STF20N65M5
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Frequently Asked Questions

The maximum continuous drain current for the STF20N65M5 is 18 A.

This model has a maximum drain-source voltage rating of 710 V.

The STF20N65M5 is packaged in a 3-pin TO-220 format, suitable for through-hole mounting.

The operating temperature range for this model is from -55°C to 150°C.

The typical gate charge for this MOSFET is 36 nanocoulombs.

This model has a maximum power dissipation rating of 30 watts.

The maximum drain-source resistance for this MOSFET is 190 milliohms.

This MOSFET is suitable for power factor correction (PFC) and pulse width modulation (PWM) applications, as well as use in industrial, laboratory, and renewable energy sectors.

The dimensions of this model are 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height.

The forward voltage for this MOSFET is 1.5 V.

The typical gate-source voltage tolerance for the STF20N65M5 is ±25 V.

This MOSFET features an enhancement mode N-channel design.

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