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STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A Continuous Drain Current, 710 V Maximum Drain Source Voltage STW38N65M5

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 20.15mm
Length 15.75mm
Model STW38N65M5
Width 5.15mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 190W
Typical Gate Charge Qg @ Vgs 71nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • This MOSFET features a TO-247 package with 3 pins for reliable through-hole mounting.
  • It offers a maximum power dissipation of 190 W suitable for high-power applications.
  • The device has a maximum drain source resistance of 95 milliohms for low on-state losses.
  • Designed for enhancement mode operation with a typical gate charge of 71 nC, ensuring fast switching.
  • Operation temperature ranges from -55°C to 150°C, supporting demanding environments.
  • Maximum gate source voltage ratings are -25 to +25 V to protect device integrity.
  • The MDmesh M5 series is optimized for power factor correction and pulse width modulation topologies.
  • Ideal applications include solar power converters, power supplies for consumer products, and electronic lighting controls.

Product Description

STMicroelectronics STW38N65M5 N-Channel MDmesh™ M5 series MOSFET is engineered for energy-conscious and compact high-power switching applications. It supports a continuous drain current of 30 A and a maximum drain source voltage of 710 V, ensuring robust performance in demanding industrial and commercial environments.

Housed in a TO-247 package with 3 pins and through-hole mounting, this device is designed for ease of integration and optimal thermal management. Its low on-state resistance of 95 milliohms reduces conduction losses, while a typical gate charge of 71 nC enables efficient switching with minimal driving power.

This enhancement mode transistor can operate reliably in temperatures from -55°C up to 150°C, making it suitable for a wide range of harsh operating conditions. The maximum gate source voltage range of -25 to +25 V ensures device safety under voltage stress.

The MDmesh M5 MOSFET series excels in power factor correction (PFC) and pulse width modulation (PWM) applications, critical for energy efficiency in systems such as solar power inverters, electronic lighting controls, and consumer power supplies.

The TO-247 package supports robust thermal dissipation and mechanical stability. The device’s 190 W power dissipation rating supports demanding power levels in compact form factors. Low gate charge enhances switching performance and reduces drive losses.

Optimized for efficiency-conscious power electronics designs. Wide operating temperature range enables use in industrial and environmental extremes. Through-hole mounting suits prototyping and high-volume manufacturing with reliable connections.

Application versatility includes renewable energy systems, lighting electronics, and general power supplies.

This product is manufactured in China and meets the emerging needs for reliable discrete semiconductor devices in industrial, laboratory, construction, HVAC, manufacturing, water treatment, agricultural, and commercial sectors. Browse the Electronics & Electricals > Discrete Semiconductors > MOSFET category on EnvMart for more power MOSFET solutions from leading brands.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A Continuous Drain Current, 710 V Maximum Drain Source Voltage STW38N65M5
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Frequently Asked Questions

The maximum continuous drain current of this model is 30 A.

This MOSFET has a maximum drain source voltage of 710 V.

It is housed in a TO-247 package, which supports through-hole mounting.

The typical gate charge for this MOSFET is 71 nC.

The maximum power dissipation for this device is 190 W, suitable for high-power applications.

The operating temperature range for this model is from -55°C to 150°C.

The maximum gate source voltage ratings are -25 V to +25 V.

The maximum drain source resistance is 95 milliohms, which helps reduce on-state losses.

This model has dimensions of 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.

The MDmesh M5 series is optimized for applications such as power factor correction and pulse width modulation, particularly in solar power converters and electronic lighting controls.

The STW38N65M5 features 3 pins for reliable connections.

This product is manufactured in China.

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