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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW38N65M5 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STW38N65M5 N-Channel MDmesh™ M5 series MOSFET is engineered for energy-conscious and compact high-power switching applications. It supports a continuous drain current of 30 A and a maximum drain source voltage of 710 V, ensuring robust performance in demanding industrial and commercial environments.
Housed in a TO-247 package with 3 pins and through-hole mounting, this device is designed for ease of integration and optimal thermal management. Its low on-state resistance of 95 milliohms reduces conduction losses, while a typical gate charge of 71 nC enables efficient switching with minimal driving power.
This enhancement mode transistor can operate reliably in temperatures from -55°C up to 150°C, making it suitable for a wide range of harsh operating conditions. The maximum gate source voltage range of -25 to +25 V ensures device safety under voltage stress.
The MDmesh M5 MOSFET series excels in power factor correction (PFC) and pulse width modulation (PWM) applications, critical for energy efficiency in systems such as solar power inverters, electronic lighting controls, and consumer power supplies.
The TO-247 package supports robust thermal dissipation and mechanical stability. The device’s 190 W power dissipation rating supports demanding power levels in compact form factors. Low gate charge enhances switching performance and reduces drive losses.
Optimized for efficiency-conscious power electronics designs. Wide operating temperature range enables use in industrial and environmental extremes. Through-hole mounting suits prototyping and high-volume manufacturing with reliable connections.
Application versatility includes renewable energy systems, lighting electronics, and general power supplies.
This product is manufactured in China and meets the emerging needs for reliable discrete semiconductor devices in industrial, laboratory, construction, HVAC, manufacturing, water treatment, agricultural, and commercial sectors. Browse the Electronics & Electricals > Discrete Semiconductors > MOSFET category on EnvMart for more power MOSFET solutions from leading brands.
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