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STMicroelectronics MDmesh M2 N-Channel MOSFET, 650 V, 18 A, 30 W TO-220 STF24N60M2

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STMicroelectronics MDmesh M2 N-Channel MOSFET, 650 V, 18 A, 30 W TO-220 STF24N60M2

Name: STMicroelectronics MDmesh M2 N-Channel MOSFET, 650 V, 18 A, 30 W TO-220 STF24N60M2
Brand: STMicroelectronics
SKU: 234580
Price: 3.94 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	China
Brand	STMicroelectronics
Height	16.4mm
Length	10.4mm
Model	STF24N60M2
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh M2
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	18A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	190mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	30W
Typical Gate Charge Qg @ Vgs	29nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.6V

Key Features

Designed for high-voltage power applications requiring efficient switching.
Features low gate charge providing fast switching speeds.
Enhancement mode channel suitable for resonant-type switching supplies.
Robust construction with a maximum operating temperature of 150°C.
Compact TO-220 package with through-hole mounting for easy integration.
Maximum power dissipation rated at 30 W for reliable performance.
Provides low drain-source resistance (190 mΩ) minimizing conduction losses.
Operates over a wide temperature range from -55°C to 150°C.

Product Description

STMicroelectronics STF24N60M2 is a high-voltage N-Channel MOSFET from the MDmesh™ M2 Series, engineered for power electronics requiring efficient and reliable switching. Featuring a maximum drain-source voltage of 650 V and continuous drain current of 18 A, this device is well-suited for industrial, power supply, and resonant LLC converter applications.

The transistor utilizes enhancement mode operation with a low typical gate charge (29 nC) for fast switching transitions, facilitating high efficiency in switching circuits. Its TO-220 3-pin package supports robust through-hole mounting and effective heat dissipation, rated for up to 30 W power dissipation.

Dimensionally compact (16.4 mm height, 10.4 mm length, 4.6 mm width), it accommodates space-constrained designs. Electrical characteristics include a low maximum drain-source resistance of 190 milliohms, forward voltage of 1.6 V, and a gate source voltage tolerance of -25 V to +25 V, offering flexible control options.

This MOSFET operates reliably across a broad temperature range from -55°C up to 150°C, ensuring durability in demanding environments. It is manufactured in China with quality standards compliant to industry requirements (although no specific approvals apply).

Industrial and commercial uses include power management in electronic equipment, motor drives, power supplies, industrial automation, and electronic switching circuits. The device's features make it a valuable component in design and manufacturing workflows where efficiency and compact power solutions are critical.

Designed for high-voltage power switching applications. Low gate charge enables efficient switching performance. Through-hole TO-220 package ensures sturdy mounting and heat dissipation. Wide operating temperature range from -55°C to 150°C.

Ideal for resonant LLC converters and industrial power supplies. Compact dimensions allow integration in size-sensitive circuits. Low drain-source resistance reduces conduction losses. High maximum power dissipation rating supports demanding loads.

Explore the MOSFET category on EnvMart for additional STMicroelectronics semiconductor components and related power electronics devices.