$7.58
$7.35
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A, 710 V Enhancement Mode, 3-Pin TO-263 Package STB38N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB38N65M5 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- High power dissipation rating of 190 W enables efficient energy handling.
- Enhanced channel mode provides low on-state losses per silicon area.
- Typical gate charge of 71 nC reduces switching losses.
- Operates reliably between -55°C to 150°C for diverse industrial applications.
- Features robust maximum gate-source voltage tolerance of -25V to +25V.
- Designed for surface mount applications with 3-pin configuration.
- Forward voltage of 1.5 V ensures efficient conduction.
- Ideal for power factor correction, PWM topologies, solar inverters, and lighting controls.
Product Description
STMicroelectronics STB38N65M5 is an N-channel MOSFET from the MDmesh M5 series designed for high-performance power electronics. It supports a maximum continuous drain current of 30 A and a drain-source voltage up to 710 V, making it suitable for demanding industrial and commercial applications.
This device features an enhancement channel mode and comes in a 3-pin TO-263 surface mount package suitable for compact and reliable circuit designs. The MOSFET supports a power dissipation of up to 190 W and typical gate charge of 71 nC, optimized for energy-conscious, high-efficiency power factor correction (PFC) and pulse width modulation (PWM) topologies.
Operating temperature ranges from -55°C to 150°C, allowing use in harsh environments. The device's compact dimensions (10.4 mm length, 9.35 mm width, and 4.6 mm height) make it ideal for designs requiring space efficiency. Its maximum gate-source voltage tolerance of -25 V to +25 V and a forward voltage of 1.5 V ensure robust electrical performance.
This MOSFET is widely applicable in industrial controls, solar power converters, power supplies for consumer electronics, and electronic lighting control applications. The surface mount package supports efficient assembly in automated manufacturing processes.
High continuous current rating of 30 A supports heavy load applications. Robust maximum voltage rating of 710 V provides wide design flexibility. Low gate charge minimizes switching losses and improves efficiency. Wide operating temperature range enables reliable use in industrial settings.
Compact footprint and low resistance support high-density circuit design. Enhancement channel mode improves performance in PWM and PFC circuits. Manufactured under quality standards in China with no automotive certification.
Explore more electronics components and power MOSFETs with STMicroelectronics on EnvMart for your industrial and commercial power management needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 30 A, making it suitable for heavy load applications.
This MOSFET supports a maximum drain-source voltage of 710 V, providing flexibility in design.
The typical gate charge for the STB38N65M5 is 71 nC, which helps reduce switching losses.
It operates reliably between -55°C to 150°C, allowing use in harsh environments.
This model comes in a 3-pin TO-263 surface mount package, suitable for compact circuit designs.
The STB38N65M5 has a power dissipation rating of up to 190 W, enabling efficient energy handling.
The forward voltage for this MOSFET is 1.5 V, ensuring efficient conduction.
The height of this model is 4.6 mm, contributing to its compact footprint.
The width of the STB38N65M5 is 9.35 mm, allowing for high-density circuit designs.
This MOSFET has a length of 10.4 mm, which supports space-efficient designs.
It is widely applicable in industrial controls, solar power converters, power supplies for consumer electronics, and electronic lighting control applications.
The maximum gate-source voltage tolerance is -25 V to +25 V, ensuring robust electrical performance.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$7.58
$7.35
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent