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STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V Enhancement, 3-Pin TO-220 STF45N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF45N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Operates with a maximum continuous drain current of 35 A.
- Handles a maximum drain-source voltage of 710 V suitable for high voltage applications.
- Features a low on-state resistance of 78 milliohms enhancing efficiency.
- Utilizes enhancement channel mode for improved switching performance.
- Maximum power dissipation is rated at 40 W for reliable use.
- Supports a wide operating temperature range from -55°C to 150°C.
- Has a typical gate charge of 82 nC for efficient gate drive control.
- Maximum gate-source voltage ranges between -25 V to +25 V for durable operation.
Product Description
STMicroelectronics STF45N65M5 is a high-performance N-channel MOSFET from the MDmesh M5 series, supplied in a 3-pin TO-220 through-hole package. It is crafted for demanding power switching applications requiring high voltage and current capabilities, making it ideal for industrial, power management, and renewable energy systems.
This MOSFET supports a maximum continuous drain current of 35 A and a voltage capability of 710 V, ensuring robust operation in high power circuits. It maintains low on-state losses with a drain-source resistance of 78 mΩ, contributing to energy efficiency and thermal management in switching environments.
Featuring enhancement mode channel technology, this device offers optimized switching characteristics suitable for power factor correction (PFC) and pulse-width modulation (PWM) topologies. Its maximum power dissipation is rated at 40 W and it operates effectively within a temperature range from -55°C to +150°C, providing reliability in harsh conditions.
The transistor has a typical gate charge of 82 nC and can tolerate gate-source voltages between -25 V and +25 V, ensuring precise gate control and protection. Physically, it is dimensioned at 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width, facilitating use in through-hole designs for enhanced system integration and assembly.
This MOSFET is well-suited for applications in industrial power supplies, electronic lighting controls, solar power converters, and other hard switching power circuits that demand efficiency, compact size, and durability.
Operates at 35 A continuous drain current with 710 V maximum voltage rating. Low drain-source resistance enables reduced power loss and heat generation. Designed for reliable operation in extreme temperature environments.
Compact TO-220 form factor for easy mounting and replacement. Ideal for use in power factor correction, PWM, and power supply circuits. Meets industry demand for energy-efficient and compact power switching solutions. Suitable for commercial and industrial electronic components and assemblies.
Browse the Electronics & Electricals category for more Discrete Semiconductors and discover additional STMicroelectronics MOSFET products to complement your designs.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 A.
It can handle a maximum drain-source voltage of 710 V, making it suitable for high voltage applications.
The on-state resistance is rated at 78 milliohms, which enhances efficiency in power switching applications.
The maximum power dissipation for this model is rated at 40 W.
It operates effectively within a temperature range from -55°C to 150°C.
The typical gate charge is 82 nC, which allows for efficient gate drive control.
The dimensions of this model are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
It comes in a 3-pin TO-220 through-hole package, suitable for easy mounting and integration.
The maximum gate-source voltage ranges between -25 V and +25 V, providing durable operation.
This model utilizes an N-channel type, which is common in power switching applications.
It is well-suited for industrial power supplies, electronic lighting controls, and solar power converters.
The mounting type for this MOSFET is through-hole, facilitating its use in various electronic assemblies.
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